Plasma-Treated Thickness-Controlled Two-Dimensional Black Phosphorus and Its Electronic Transport Properties

Jia, Jingyuan; Jang, Sung Kyu; Lai, Shen; Xu, Jiao; Choi, Young Jin; Park, Jin‐Hong; Lee, Sungjoo

doi:10.1021/acsnano.5b04265

Cited by 187 publications

(207 citation statements)

References 39 publications

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“…Jia et al212 adopted a plasma‐etching treatment not only to control the thickness of BP flakes but also to remove the chemical degradation caused on exposed oxidized BP surfaces. The thickness control of few‐layer BP was tuned by the plasma etching time.…”

Section: Fabrication Of Few‐layered Bpmentioning

confidence: 99%

Emerging Trends in Phosphorene Fabrication towards Next Generation Devices

et al. 2017

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The challenge of science and technology is to design and make materials that will dominate the future of our society. In this context, black phosphorus has emerged as a new, intriguing two‐dimensional (2D) material, together with its monolayer, which is referred to as phosphorene. The exploration of this new 2D material demands various fabrication methods to achieve potential applications— this demand motivated this review. This article is aimed at supplementing the concrete understanding of existing phosphorene fabrication techniques, which forms the foundation for a variety of applications. Here, the major issue of the degradation encountered in realizing devices based on few‐layered black phosphorus and phosphorene is reviewed. The prospects of phosphorene in future research are also described by discussing its significance and explaining ways to advance state‐of‐art of phosphorene‐based devices. In addition, a detailed presentation on the demand for future studies to promote well‐systemized fabrication methods towards large‐area, high‐yield and perfectly protected phosphorene for the development of reliable devices in optoelectronic applications and other areas is offered.

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Section: Fabrication Of Few‐layered Bpmentioning

confidence: 99%

Emerging Trends in Phosphorene Fabrication towards Next Generation Devices

et al. 2017

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“…18,19 BP has strong in-plane bonds in conjunction with weak van der Waals interlayer interactions thereby enabling exfoliation into few-layer BP sheets or phosphorene (single-layer BP). [20][21][22][23][24] Since 2014, BP has attracted tremendous research interest [25][26][27][28][29][30][31][32][33][34][35][36][37][38] because of its unique properties such as layerdependent direct bandgap, 28,39 anisotropy, 25,26,31,32,34,40 hingelike structure, 41 and quasi-one-dimensional excitonicnature, 42 all of which contrast markedly with those of other types of 2D materials. Nevertheless, BP degrades under ambient conditions as a result of the reaction with oxygen (P→P x O y ) and subsequent transformation to PO 4 3-in the presence of water.…”

Section: Introductionmentioning

confidence: 99%

Black phosphorus: a two-dimensional reductant for in situ nanofabrication

et al. 2017

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The reducing capability of two-dimensional black phosphorus is demonstrated. The high reducing ability and unique twodimensional morphology of black phosphorus not only facilitate in situ synthesis of Au nanoparticles and BP@Au composites, but also enable multiscale control of local reduction of GO to reduced GO (rGO). The novel two-dimensional reductant has large potential in various in situ nanofabrication applications. 1, 2 For instance, graphene boasting good optoelectronic characteristics and high mechanical strength has large potential in energy conversion and storage 3-5 and transition-metal dichalcogenides (TMDs) with unique semiconducting properties are attractive to scalable digital field-effect transistors.6-8 Furthermore, the chemical reactivity of 2D materials such as graphene oxide (GO) and TMDs has raised concerns and novel templates have been proposed to fabricate functional composites.

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“…The V oc and I sc comparisons between the three devices containing different layer number variations suggest potential photovoltaic engineering by tailoring the thicknesses and their difference of the flakes which can be realized through fabrication techniques such as etching. [49][50][51] Further comparison between the three devices is made in terms of their P el , EQE, and η with the results given in Figure 4c-e, respectively. In Figure 4c, we see that D1 produced the largest electrical power while it has the least appealing EQE performance as shown in Figure 4b.…”

Section: Photovoltaics In Bp Heterojunction Diodementioning

confidence: 99%

Pronounced Photovoltaic Effect in Electrically Tunable Lateral Black‐Phosphorus Heterojunction Diode

Wang

Huang

Tan

et al. 2017

Adv Elect Materials

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complicated split-gates structure and suffer from nonabrupt junction interface due to the divergence of static electric field, limiting their practical applications. 2D lateral homojunctions can be achieved by selective chemical doping as well, as in few-layer MoS 2 [7] and BP cases. [17,18] In addition to homojunctions, heterojunctions have recently been under intense study to extend further the frontiers of 2D materials for electronic and optoelectronics. Particularly, by vertically stacking together flakes of different 2D materials, the so-called van der Waals heterojunction is formed which gathered extensive attention by offering a vast number of candidate structures for high-performance optoelectronic applications. [3,8,11,15,19,20] Nevertheless, the construction of this structure usually requires a dry/wet transfer technique that complicates the fabrication process. [21] Besides, it also tends to suffer from contaminants and bubbles introduced during the transfer, resulting in unwanted defects at the interface. [11] In contrast to vertical heterojunctions, lateral heterojunctions composed of p-and n-type TMDCs semiconductors are also explored where disparate materials can be grown along the edges of the previously grown flakes in the epitaxy process. [22][23][24] Yet, this strategy is severely challenged by the control of large-area uniform growth and the high yield of clean junction interface. As well known, an inherent nature of 2D materials is their thickness-(or layer-number-) dependent bandgaps. [25] Such dependence implies energy bands discontinuities at the interface of different-layer-number films, forming spontaneously a lateral heterojunction distinct from the conventional ones. [26][27][28][29] The study on this kind of structure is likely to expand the realms of 2D materials diverse applications but few works have been done. [26,28,29] Recently, few-layer black phosphorus has been rediscovered as a novel promising 2D semiconductor for nextgeneration nanoelectronic and optoelectronic devices due to its direct bandgap, ambipolar conduction, anisotropic nature, and a high field-effect hole mobility. [30][31][32][33] Especially, BP has a largely adjustable direct thickness-dependent bandgap ranging from 2.0 eV for monolayer to 0.3 eV for its bulk form, [34] which bridges the bandgap space between gapless graphene and large gap TMDCs by covering the mid-infrared to near-infrared wavelengths, leading to new electronic and optoelectronic devices. [33] In this work, we experimentally demonstrate a gate-tunable all-BP lateral heterojunction diode with thickness-induced bandgap difference for high-performance photovoltaic application, Recently, both lateral and vertical p-n junctions have been realized in 2D materials using various strategies, with a number of works on exploring the potential of lateral heterojunctions resulting from thickness-modulated bandgaps at the interface. Here, electrically tunable all-black-phosphorus (BP) lateral heterojunction diodes, without the need of split-gating or sele...

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Plasma-Treated Thickness-Controlled Two-Dimensional Black Phosphorus and Its Electronic Transport Properties

Cited by 187 publications

References 39 publications

Emerging Trends in Phosphorene Fabrication towards Next Generation Devices

Emerging Trends in Phosphorene Fabrication towards Next Generation Devices

Black phosphorus: a two-dimensional reductant for in situ nanofabrication

Pronounced Photovoltaic Effect in Electrically Tunable Lateral Black‐Phosphorus Heterojunction Diode

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