2005
DOI: 10.1002/vipr.200500253
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Plasmachemische Gasphasenabscheidung – eine Technologie zur Deposition organischer und anorganischer Schichten. Plasma Enhanced Chemical Vapor Deposition – a Thin Film Technique for Organic and Inorganic Layers

Abstract: Die plasmachemische Gasphasenabscheidung (PECVD) ist ein Verfahren zur Deposition dünner Schichten im Dickenbereich bis einige μm. Es wird gegenwärtig bevorzugt zur Abscheidung elektronisch hochwertiger dielektrischer und halbleitender Siliziumlegierungen bei Temperaturen unter 450 °C und Drücken um 1 mbar auf ebenen Substraten eingesetzt und findet zunehmend Anwendung zur Oberflächenfunktionalisierung mit Polymeren. Der Vorzug der PECVD besteht in der Möglichkeit der Modifikation der Schichteigenschaften über… Show more

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Cited by 5 publications
(2 citation statements)
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“…The resultant gases are then in a chemical state more conducive to growth of nanowires at the substrate. The primary rationale for using PECVD is to circumvent damage to temperature‐sensitive substrates [250] . PECVD is widely used in the microelectronics industry to deposit coatings onto silicon wafers that have been doped with precise quantities of selected elements.…”
Section: Gas‐phase Synthesismentioning
confidence: 99%
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“…The resultant gases are then in a chemical state more conducive to growth of nanowires at the substrate. The primary rationale for using PECVD is to circumvent damage to temperature‐sensitive substrates [250] . PECVD is widely used in the microelectronics industry to deposit coatings onto silicon wafers that have been doped with precise quantities of selected elements.…”
Section: Gas‐phase Synthesismentioning
confidence: 99%
“…Silicon nanowires grown via VLS in a CVD reactor exhibited subtle differences in tapering from root to tip depending on whether silane (SiH 4 ) or dichlorosilane (SiH 2 Cl 2 ) was used. [250] In their study, it was discovered from use of dichlorosilane that the HCl byproduct etched the sidewalls of the nanowires thereby leading to narrower diameters away from the catalyst tip. An opposite trend was observed with use of silane from slow concurrent VS-growth on the sidewalls.…”
Section: Precursor Typementioning
confidence: 99%