Plasmas Injected into Solids: Analytic Study of the Diffusion Corrections

Abstract

The properties of a plasma injected into an insulator or semiconductor are analytically describable if diffusive current flow is neglected. However it is known from experimental and theoretical (computer) studies that the corrections imposed by the dominance of diffusive current flow near the contacts are quite large for L/La<10 and significant even for larger L/La, where L is the distance between the injecting contacts and La the ambipolar diffusion length. The regional approximation method is employed to obtain an approximate, but complete analytical description of the injected plasma for the two problems. Satisfactory agreement is obtained with previous computer results of Baron.

Experimental verification of a new approach to the analysis of the quasineutral carrier transport in semiconductors and semiconductor structures

“…Qualitative considerations that can account for the existence of the diffusion and drift modes can be formulated as follows [19]. A contact injecting carriers is blocking for carriers of the opposite sign.…”

“…e.g. [8]) that, at x 2 < x W , the carrier transport occurs in the diffusion mode and is described by equation ( 1) [8,19]. The reason is that dp dx is positive to the right of the point x min .…”