Diffusion effects in the double injection negative-resistance problem

Vasi, J.; Westgate, Charles R.

doi:10.1016/0038-1101(73)90037-3

Cited by 4 publications

(1 citation statement)

References 11 publications

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“…The aim of our considerations is to develop a new model description for double injection in the high-resistivity i region of a sandwiched p+-i-nf structure within the RAM by taking into account the influence of diffusion as well as of sparc charge effects on the current flow across the i region with the help of a proper Combination of the electronic regions employed in the previous models [ 1 to 4,7]. I n agreement with the models discussed above.…”

Section: Introductionmentioning

confidence: 99%

A regional approximation for a real p+–i–n+ double-injection structure by including both diffusion and space charge effects

Anklam¹,

Brodkorb²,

Haubenreißer³

1977

Phys. Stat. Sol. (a)

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On the basis of the regional approximation method a new model description is represented for double injection in the high resistivity i region of a sandwiched p+‐i‐n+ structure, containing a monoenergetic set of acceptor‐like deep traps completely filled in the thermal equilibrium. The injecting contacts are semiconducting p+ and n+ regions forming two usual homojunctions with the active i region. The barrier‐ and volume‐controlled current flow in the forward biased p+‐i‐n+ diode is calculated by taking into account both diffusion and space charge effects, but no effects of thermal carriers within the i region. An approximative analytical description of the current‐voltage characteristic including the threshold voltage for the onset of the negative differential resistance regime is given. The results of the model calculations are valid within a certain current range and above a certain critical length of the i region. The threshold voltage is a product of a modified Lampert threshold voltage where the length 2L of the i region is replaced by a reduced length 2L* describing the influence of diffusion effects in the neighbourhood of the p+‐contact, and of a factor which depends on the ratio of the hole and electron mobilities, on the ratio of the hole lifetimes for high and low injection conditions, and on the quotient of a dielectric relaxation time for the holes and of the low injection lifetime for the holes.

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Section: Introductionmentioning

confidence: 99%

A regional approximation for a real p+–i–n+ double-injection structure by including both diffusion and space charge effects

Anklam¹,

Brodkorb²,

Haubenreißer³

1977

Phys. Stat. Sol. (a)

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Stress effect in sputtered metal–semiconductor junctions

Groth

Hök

Tove

1973

Phys. Stat. Sol. (a)

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Rcsults are reported on the stress sensitive I-U characteristics of NS junctions prepared by r. f. sputtering of aluminium on n-type silicon. A stress-sensitive negative resistance effect found when the deposition is made on very high resistivity material is also reported.Es wird iiber druckempfindliche I-L7-Kennlinien von Metall-Halbleiter-Ubergangen berichtet, die durch r. f.-Zerstaubung von Aluminium auf n-Silizium hergestellt wurden. Ein druckempfindlicher negativer spezifischer Widerstand, der an Proben aus sehr hochohmigem Material festgestellt werden konnte, wird beschrieben.

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