Experimental verification of a new approach to the analysis of the quasineutral carrier transport in semiconductors and semiconductor structures

Abstract

According to the recently suggested new approach to the description of the quasineutral transport in semiconductors and semiconductor devices, the current-voltage characteristics of the p + -p-n + and p + -n-n + structures fundamentally differ at large W /L ratios and high current densitiesj (W is the base width of a semiconductor structure, and L is the ambipolar diffusion length). In the p + -p-n + structures, the differential resistance R d must steadily decrease with increasing j at high injection levels for any W /L ratio. In the p + -n-n + structures, it would be expected that the 'classical' decrease in R d with increasing j should give a way to an increase in R d when j approaches from below a critical value j crn . Then, at j > j crn , the decrease in R d with increasing j must be resumed. These predictions were experimentally verified on Si p + -p-n + and p + -n-n + diodes. The W /L ratio in these structures was varied by irradiation with fast (1 MeV) electrons or gamma photons from a Co 60 source. The results obtained fully agree with the predictions of the new approach to the analysis of the quasineutral carrier transport in semiconductors and semiconductor structures.

Holding current and switch-on mechanisms in 12 kV, 100 A 4H-SiC optically triggered thyristors

“…The thyristor switch-off was simulated using the 'INVESTIGATION' ('ISSLEDOVANIE') software package [15]. This software has already been used to analyze steady state and transient processes in Si and SiC diodes and thyristors (see, e.g., [10,[16][17][18]). The parameters of the simulated thyristor structure corresponded to those described above.…”

S-Образные Вольт-Амперные Характеристики Мощных Диодов Шоттки При Больших Плотностях Тока

“…Этот метод облегчает нахождение приближенного решения нелинейного уравнения (1). В соответствии с результатами работ [13,17] уравнение непрерывности в области 1 -области QND переноса -приобретает следующий вид:…”

“…Решение дрейфового уравнения непрерывности (4) хорошо известно и приведено в классической книге [17]. В нашем случае оно имеет вид…”

Transport phenomena in intrinsic semiconductors and insulators at high current densities: Suppression of the broken neutrality drift

“…8,9 It has been shown that the equation describing the carrier and field distributions along the base becomes markedly different. As a result, static 10 and transient 11 characteristics of the structures are strongly changed.…”