Plasmon Data, Dielectric Function, and Optical Constants of CdGeP<sub>2</sub> from Electron Energy Loss Measurements between 4.5 and 35 eV

BThe interest in the optical properties of the ternary analogy of A pounds, the A1%IVC: compounds, arises from theoretical as well as practical reasons. The band structure of a ternary compound can be obtained in its gross I11 v features by backfolding of the corresponding A B band structure into the first Brillouin zone of its ternary analog. Then at k' = 0 interband transitions may occur that cannot be observed in the corresponding binary compound (e.g., in the indirect gap G a P and pseudodirect gap ternary compound ZnGeP2 /I/). This led to a practical interest in this compound class as a potential material basis for optoelectronics. com-The optical properties of many ternary compounds -are intensively investigated in the energy region below 6 eV mainly by modulation spectroscopic methods (e.g. /2/). At higher energies reliable data a r e nearly exclusively missing. There is one report on reflectivity measurements up t o 12 eV /3/ from which the dielectric function e(E) = E~( E ) + i e2(E) is determined by KramersKronig analysis affected with all the uncertainties that a r i s e from the narrowlimited energy range and the e r r o r in the reflection coefficient values at higher energies.In this short note we report on transmission electron energy loss (TEL) measurements on monocrystalline CdSnPZ thin films. From the experimental energy loss spectrum E(E) was computed. The results are discussed under considerations of two aspects: comparison with results obtained from reflectivity measurements /3, 41 and with data on InP (binary analog of CdSnPZ) as far as available /5, 6/. 1 ) Silbermannstr. 1 , DDR-9200 Freiberg, GDR.2 ) Zentralinstitut fur Elektronenphysik d e r Akademie d e r Wissenschaften d e r DDR, Bereich Dunne Schichten, Hausvcgteiplatz 5/7, DDR-lo86 Berlin, GDR.

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Optical Properties of ZnSiAs₂ Single Crystalline Thin Films from Electron Energy Loss Measurements

Boudriot

Deus

Gründler³

et al. 1987

Physica Status Solidi (b)

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Plasmon Data, Dielectric Function, and Optical Constants of CdGeP₂ from Electron Energy Loss Measurements between 4.5 and 35 eV

Cited by 4 publications

References 1 publication

Optical Properties of Single‐Crystalline ZnSiP₂ from Electron Energy Loss Measurements between 3 and 40 eV

Optical Properties of Single‐Crystalline ZnSiP₂ from Electron Energy Loss Measurements between 3 and 40 eV

Electron Energy Loss Measurements on CdSnP₂: Plasmon Data, Dielectric Function, Band Structure Data

Optical Properties of ZnSiAs₂ Single Crystalline Thin Films from Electron Energy Loss Measurements

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Plasmon Data, Dielectric Function, and Optical Constants of CdGeP2 from Electron Energy Loss Measurements between 4.5 and 35 eV

Cited by 4 publications

References 1 publication

Optical Properties of Single‐Crystalline ZnSiP2 from Electron Energy Loss Measurements between 3 and 40 eV

Optical Properties of Single‐Crystalline ZnSiP2 from Electron Energy Loss Measurements between 3 and 40 eV

Electron Energy Loss Measurements on CdSnP2: Plasmon Data, Dielectric Function, Band Structure Data

Optical Properties of ZnSiAs2 Single Crystalline Thin Films from Electron Energy Loss Measurements

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Plasmon Data, Dielectric Function, and Optical Constants of CdGeP₂ from Electron Energy Loss Measurements between 4.5 and 35 eV

Optical Properties of Single‐Crystalline ZnSiP₂ from Electron Energy Loss Measurements between 3 and 40 eV

Optical Properties of Single‐Crystalline ZnSiP₂ from Electron Energy Loss Measurements between 3 and 40 eV

Electron Energy Loss Measurements on CdSnP₂: Plasmon Data, Dielectric Function, Band Structure Data

Optical Properties of ZnSiAs₂ Single Crystalline Thin Films from Electron Energy Loss Measurements