Plasmon-enhanced photoresponse in Ag-WS2/Si heterojunction

Patel, Meswa; Pataniya, Pratik M.; Late, Dattatray J.; Sumesh, C.K.

doi:10.1016/j.apsusc.2020.148121

Cited by 53 publications

(36 citation statements)

References 56 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The luminescence intensity of carbon dots can be improved 5–6 times by LSPR of Ag@SiO 2 NPs [ 24 ]. The photoresponse of the Ag-WS 2 /Si heterostructure device is enhanced due to plasmonic improvement [ 25 ]. The question of size-dependent plasmonic resonances in NPs has been investigated and discussed for several decades [ 16 , 17 , 18 ].…”

Section: Introductionmentioning

confidence: 99%

Evolution of Electronic State and Properties of Silver Nanoparticles during Their Formation in Aqueous Solution

Ershov

Tarasova

Ершов

2021

IJMS

View full text Add to dashboard Cite

The electron density of a nanoparticle is a very important characteristic of the properties of a material. This paper describes the formation of silver nanoparticles (NPs) and the variation in the electronic state of an NP’s surface upon the reduction in Ag+ ions with oxalate ions, induced by UV irradiation. The calculations were based on optical spectrophotometry data. The NPs were characterized using Transmission electron microscopy and Dynamic light scattering. As ~10 nm nanoparticles are formed, the localized surface plasmon resonance (LSPR) band increases in intensity, decreases in width, and shifts to the UV region from 402 to 383 nm. The interband transitions (IBT) band (≤250 nm) increases in intensity, with the band shape and position remaining unchanged. The change in the shape and position of the LSPR band of silver nanoparticles in the course of their formation is attributable to an increasing concentration of free electrons in the particles as a result of a reduction in Ag+ ions on the surface and electron injection by radicals. The ζ-potential of colloids increases with an increase in electron density in silver nuclei. A quantitative relationship between this shift and electron density on the surface was derived on the basis of the Mie–Drude theory. The observed blue shift (19 nm) corresponds to an approximately 10% increase in the concentration of electrons in silver nanoparticles.

show abstract

Section: Introductionmentioning

confidence: 99%

Evolution of Electronic State and Properties of Silver Nanoparticles during Their Formation in Aqueous Solution

Ershov

Tarasova

Ершов

2021

IJMS

View full text Add to dashboard Cite

show abstract

“…A high sensitivity (i.e., the ratio between dark and photocurrent density) of larger than 1.57 × 10 8 is achieved at 1550 nm. To obtain the information about inhomogeneities at interface of device, from the slope of the V versus In(J) plot at 300 K in the darkness, the ideality factor n is calculated as followed 36 , 53 : where q , k B , T , J , and A denote electron charge, the Boltzmann constant, operating temperature, dark current density, the effective area of the device, respectively. The ideality factor is 4.46 at 0 V. The value, greater than 1, shows the device suffers from the inhomogeneities, which is due to the poor contact between the bottom Ti/Au contact and ITO.…”

Section: Resultsmentioning

confidence: 99%

“…The InGaAs PIN flexible prototype photodetector possesses high surface-to-volume ratio, the surface of the device tend to absorb large number of atmospheric molecular, such as water vapor, oxygen, carbon dioxide absorbed during the device fabrication and testing. The According to the oxygen-assisted mechanism 36 , 53 : …”

Section: Resultsmentioning

confidence: 99%

“…Especially, the transition metal dichalcogenide (TMDCs) based on organic substrate, such as MoS 2 on PET, WSe 2 or MoS 2 /WSe 2 on paper, provide advanced flexible visible detectors with high responsivity and quantum efficiency, the preparation scheme has low cost and large device preparation area. Moreover, broadband photodetection has been achieved in TMDCs 18 , 36 , IGZO 37 and Si-based material 38 , which enhances the absorption of light by the decoration on surface with dissimilar superstructure or nanostructure. However, the flexible photodetection realized with above material is able to covers UV, Vis and NIR, but has no response to short-wave infrared (SWIR).…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

High performance visible-SWIR flexible photodetector based on large-area InGaAs/InP PIN structure

Zhang

Chen

et al. 2022

Sci Rep

View full text Add to dashboard Cite

Mechanically flexible optoelectronic devices and systems can enable a much broader range of applications than what their rigid counterparts can do, especially for novel bio-integrated optoelectronic systems, flexible consumer electronics and wearable sensors. Inorganic semiconductor could be a good candidate for the flexible PD when it can keep its high performance under the bending condition. Here, we demonstrate a III–V material-based flexible photodetector operating wavelength from 640 to 1700 nm with the high detectivity of 5.18 × 1011 cm‧Hz1/2/W and fast response speed @1550 nm by using a simply top-to-down fabrication process. The optoelectrical performances are stable as the PDs are exposed to bending cycles with a radius of 15 mm up to 1000 times. Furthermore, the mechanical failure mode of the PD is also investigated, which suggests that the cracking and delamination failure mode are dominant in bending up and bending down direction, respectively. Such a flexible III–V material-based PD and design with stable and high performance could be a promising strategy for the application of the flexible broad spectrum detection.

show abstract

“…It is worth noting that the area of WS 2 is very large to wafer scale along with ultrahigh response speed, indicating a potential application in the integrated circuits design. In a latest report, Ag nanoparticles were decorated on WS 2 nanosheets via an LPE to form a metal/TMDCs nanocomposite [86]. Just like the TiN/ graphene heterostructure, the Ag/WS 2 structure would provide an improved plasmonic effect which can enhance the light absorption and photodetection ability of the device.…”

Section: Other Mo-and W-dichalcogenide-based Devicesmentioning

confidence: 99%

Recent progress in optoelectronic applications of hybrid 2D/3D silicon-based heterostructures

et al. 2021

View full text Add to dashboard Cite

Silicon-based semiconductor technology has made great breakthroughs in the past few decades, but it is reaching the physical limits of Moore's law. In recent years, the presence of two-dimensional (2D) materials was regarded as an opportunity to break the limitation of traditional siliconbased optoelectronic devices owing to their special structure and superior properties. In consideration of the widely studied hybrid integration of 2D material detectors and 3D siliconbased systems, in this paper, the basic properties of several 2D materials used in photodetectors are summarized. Subsequently, the progress in silicon photonic integrated photodetectors based on 2D materials is reviewed, followed by the summarization of the device structure and main performances. Then, the combination of some other traditional and 2D devices is discussed as a supplement. Finally, the prospective development of the hybrid 2D/3D silicon-based heterostructures is expected.

show abstract

Plasmon-enhanced photoresponse in Ag-WS2/Si heterojunction

Cited by 53 publications

References 56 publications

Evolution of Electronic State and Properties of Silver Nanoparticles during Their Formation in Aqueous Solution

Evolution of Electronic State and Properties of Silver Nanoparticles during Their Formation in Aqueous Solution

High performance visible-SWIR flexible photodetector based on large-area InGaAs/InP PIN structure

Recent progress in optoelectronic applications of hybrid 2D/3D silicon-based heterostructures

Contact Info

Product

Resources

About