Inorganic van der Waals bonded semiconductors such as
transition
metal dichalcogenides are the subject of intense research due to their
electronic and optical properties which are promising for next-generation
optoelectronic devices. In this context, understanding the carrier
dynamics, as well as charge and energy transfer at the interface between
metallic contacts and semiconductors, is crucial and yet quite unexplored.
Here, we present an experimental study to measure the effect of mutual
interaction between thermionically injected and directly excited carriers
on the exciton formation dynamics in bulk WS2. By employing
a pump–push–probe scheme, where a pump pulse induces
thermionic injection of electrons from a gold substrate into the conduction
band of the semiconductor, and another delayed push pulse that excites
direct transitions in the WS2, we can isolate the two processes
experimentally and thus correlate the mutual interaction with its
effect on the ultrafast dynamics in WS2. The fast decay
time constants extracted from the experiments show a decrease with
an increasing ratio between the injected and directly excited charge
carriers, thus disclosing the impact of thermionic electron injection
on the exciton formation dynamics. Our findings might offer a new
vibrant direction for the integration of photonics and electronics,
especially in active and photodetection devices, and, more in general,
in upcoming all-optical nanotechnologies.