Platinum and gold thin films deposited by filtered vacuum arc: morphological and crystallographic grain sizes

Salvadori, M. C.; Melo, L. L.; Vaz, Alfredo R.; Wiederkehr, Rodrigo Sérgio; Teixeira, F. S.; Cattani, M.

doi:10.1016/j.surfcoat.2004.08.068

Cited by 31 publications

(19 citation statements)

References 20 publications

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“…The electrical resistance of Pt thin films has been monitored during growth by argon ion-beam sputtering (IBS) [6,7] and filtered cathodic arc [8]. The morphological and crystallographical grain sizes of Pt films grown by filtered cathodic arc have been investigated by scanning tunneling microscopy (STM) and X-ray diffractometry (XRD) [9].…”

Section: Introductionmentioning

confidence: 99%

Growth, coalescence, and electrical resistivity of thin Pt films grown by dc magnetron sputtering on SiO2

Agustsson¹,

Arnalds²,

Ingason

et al. 2008

Applied Surface Science

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Section: Introductionmentioning

confidence: 99%

Growth, coalescence, and electrical resistivity of thin Pt films grown by dc magnetron sputtering on SiO2

Agustsson¹,

Arnalds²,

Ingason

et al. 2008

Applied Surface Science

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“…This setup has been described elsewhere. 8,9 Film thickness in each case was close to 200 Å, as determined by subsequent AFM profilometry. In order to maximize the diamond fraction in the DLC films the substrates were, in both cases, pulse biased to -100 V; thus the film internal stress was maximized and so also the tendency for delamination, which we wanted for this experiment.…”

Section: Interface Mixing For Enhanced Dlc Thin Film Adhesionmentioning

confidence: 68%

“…The filtered vacuum arc plasma gun system has been described in some detail elsewhere. 8,9 In brief, in this kind of plasma facility metal (and carbon) plasma can be formed in pulses typically several milliseconds long (here 5 ms) with a repetition rate typically 1 pps. The high voltage pulser is also compatible with an alternative gaseous plasma source which operates in steady-state mode (nonpulsed).…”

Section: Introductionmentioning

confidence: 99%

A high voltage pulse power supply for metal plasma immersion ion implantation and deposition

Salvadori

Teixeira

Araujo

et al. 2010

Review of Scientific Instruments

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A high voltage pulse power supply for metal plasma immersion ion implantation and deposition REVIEW OF SCIENTIFIC INSTRUMENTS, v.81, n.12, 2010 http://producao.usp Related ArticlesA non-stationary model for high power impulse magnetron sputtering discharges J. Appl. Phys. 110, 103303 (2011) Epitaxial lateral overgrowth of InN by rf-plasma-assisted molecular-beam epitaxy AIP Advances 1, 042145 (2011) Levitation and collection of diamond fine particles in the rf plasma chamber equipped with a hot filament Phys. Plasmas 18, 113703 (2011) Mechanisms of suppressing secondary nucleation for low-power and low-temperature microwave plasma selfbias-enhanced growth of diamond films in argon diluted methane AIP Advances 1, 042117 (2011) Inductively coupled plasma grown semiconductor films for low cost solar cells with improved light-soaking stability Appl. Phys. Lett. 99, 033510 (2011) Additional information on Rev. Sci. Instrum. We describe the design and implementation of a high voltage pulse power supply (pulser) that supports the operation of a repetitively pulsed filtered vacuum arc plasma deposition facility in plasma immersion ion implantation and deposition (Mepiiid) mode. Negative pulses (micropulses) of up to 20 kV in magnitude and 20 A peak current are provided in gated pulse packets (macropulses) over a broad range of possible pulse width and duty cycle. Application of the system consisting of filtered vacuum arc and high voltage pulser is demonstrated by forming diamond-like carbon (DLC) thin films with and without substrate bias provided by the pulser. Significantly enhanced film/substrate adhesion is observed when the pulser is used to induce interface mixing between the DLC film and the underlying Si substrate.

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“…This plasma facility has been described previously. 10,11 The plasma was directed toward the entrance of the negatively biased implantation chamber. magnetically suppressed Faraday cup, allowing estimation of the implanted dose from the cup current and the number of pulses.…”

Section: Methodsmentioning

confidence: 99%

Gold ion implantation into alumina using an “inverted ion source” configuration

Salvadori

Teixeira

Sgubin

et al. 2013

Review of Scientific Instruments

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Gold ion implantation into alumina using an "inverted ion source" configuration. Gold ion implantation into alumina using an "inverted ion source" configuration a) We describe an approach to ion implantation in which the plasma and its electronics are held at ground potential and the ion beam is injected into a space held at high negative potential, allowing considerable savings both economically and technologically. We used an "inverted ion implanter" of this kind to carry out implantation of gold into alumina, with Au ion energy 40 keV and dose (3-9) × 10 16 cm −2 . Resistivity was measured in situ as a function of dose and compared with predictions of a model based on percolation theory, in which electron transport in the composite is explained by conduction through a random resistor network formed by Au nanoparticles. Excellent agreement is found between the experimental results and the theory. © 2013 AIP Publishing LLC.

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Platinum and gold thin films deposited by filtered vacuum arc: morphological and crystallographic grain sizes

Cited by 31 publications

References 20 publications

Growth, coalescence, and electrical resistivity of thin Pt films grown by dc magnetron sputtering on SiO2

Growth, coalescence, and electrical resistivity of thin Pt films grown by dc magnetron sputtering on SiO2

A high voltage pulse power supply for metal plasma immersion ion implantation and deposition

Gold ion implantation into alumina using an “inverted ion source” configuration

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