PMMA-based resists for a spectral range near 13nm

Bulgakova, S. A.; Lopatin, A. Ya.; Luchin, V. I.; Mazanova, L. M.; Molodnjakov, S.A; Салащенко, Н. Н.

doi:10.1016/s0168-9002(00)00237-0

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Euv Lithography In Russia1

Introduction1

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2008

2013

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Cited by 9 publications

(2 citation statements)

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“…2. Photoresists with record sensitivity up to 2-3 mW/cm 2 have been developed in IPM [14]. For investigation of resolution provided by the photoresists a static EUV expose tool based on an aspherical Schwarzschild objective with the designed resolution of 30 nm is developing now.…”

Section: Euv Lithography In Russiamentioning

confidence: 99%

Projection XEUV-nanolithography

Чхало

Салащенко

2009

Nuclear Instruments and Methods in Physics Research Section A:

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Section: Euv Lithography In Russiamentioning

confidence: 99%

Projection XEUV-nanolithography

Чхало

Салащенко

2009

Nuclear Instruments and Methods in Physics Research Section A:

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“…In our previous work 2 a combination of these materials was used in the form of multilayer Zr/Si structure. One inch mesh supported multilayer filters of high mechanical strength with transparency of 50% at = 13 nm were manufactured and used 3 in experiments on exposure of EUV resists.…”

Section: Introductionmentioning

confidence: 99%

<title>Multilayer Zr/Si filters for EUV lithography and for radiation source metrology</title>

et al. 2008

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The technique for fabrication of thin film filters with high mechanical strength, capable of withstanding the prolonged heat load of 1 W/cm 2 , has been developed. Freestanding multilayer Zr/Si filters of size 20 150 mm 2 with high transparency of 76% at wavelength = 13 nm were manufactured for EUV lithography tool. We have also developed and fabricated various designs of filters (freestanding or mesh supported) with lower transparency of 40-50% for experiments with intensive EUV sources. The tests of differential pressure withstandability and heat-resistance of filter samples were fulfilled. In order to model the influence on the filter of intensive radiation of the lithography source we have tested Zr/Si film samples by the Joule heating in vacuum at residual pressure of 10 -8 Torr. The testing consisted in continuous heating of Zr/Si films at the electrical power per area unit from 0.5 W/cm 2 to 6 W/cm 2 during long period of time (up to 2 months). The influence of the long-term heat load on the transparency of samples at = 13 nm and within wavelength region 0.3 -2 m was investigated.

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