Pocket Implantation Effect on Drain Current Flicker Noise in Analog nMOSFET Devices

Degradation of 1/f noise in short channel MOSFETs due to halo angle induced VT non-uniformity and extra trap states at interface

“…To calculate the increase in 1/f noise only due to the nonuniform V T along the channel, we first assumed that near-interfacial traps were not affected by halo implantation. In that case, using the approach followed in [16], assuming uniform distribution of oxide trap density along the channel, we simplified Eq. (1) as following where L 1 , L 2 , L 3 are the effective channel lengths of three different V T regions.…”

“…For very long channel devices, halo implant induced non-uniformity of threshold voltage is not significant and then from the long channel noise data we can extract the oxide trap density. Following the typical approach followed in literature [16][17][18][19][20] and using this trap density number and extracted L 1 , L 2 , L 3 , V t1 , V t2 , V t3 , we calculated the expected 1/f noise for larger and smaller halo angle devices at the same dose and energy. The difference in 1/f noise between large and small halo angle device; i.e.…”

Mg Tilted-Angle Ion Implantation for Threshold Voltage Control and Suppression of the Short Channel Effect in GaN MISFETs

“…The threshold voltage of the MISFET with the Mg dose of 8 × 10 13 /cm 2 is increased at the gate length around 0.7 μm. This might be caused by the reverse short channel effect (RSCE) and the higher implant dose shows a larger RSCE [11].…”

Analytical Modeling of Flicker Noise in Halo Implanted MOSFETs

“…However, such strong halo implants have been found to be detrimental to analog performance [1], [2] including 1/f noise [3], [4] in particular for long channel devices [5]. The degradation of 1/f noise has been attributed to extra trap states generated due to implantation process [3], and/or threshold voltage variation along the channel [4]. Due to this reason noise behavior in strong pocket devices are significantly different than in uniformly doped devices.…”

“…al. [4] based on a non-uniform threshold voltage distribution using the unified noise model, it adds the noise contributions from the different regions with equal proportions. Such formulation might lead, in certain cases, to excess contribution of noise from pocket part in strong inversion, or excess contribution from channel part for lower bias.…”