Point Defects in Semiconductors II

Bourgoin, J. C.; Lannoo, M.

doi:10.1007/978-3-642-81832-5

Cited by 420 publications

(188 citation statements)

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“…A similar conclusion was drawn later on by Svensson et al 4 in an IR study of di-vacancies in Cz-grown silicon samples containing ϳ10 19 Sn/cm 3 after high-dose electron irradiations ͑doses of 5ϫ10 17 -2.5ϫ10 18 cm Ϫ2 ͒. Following annealing at temperatures above ϳ423 K a strong increase of the di-vacancy and A-center lines in the IR spectra was observed, and at ϳ463 K the di-vacancy line reached a level comparable to that of the control sample without Sn, indicating that the Sn atoms had trapped most of the produced vacancies, which were essentially all released at 463 K.…”

Section: Introductionsupporting

confidence: 85%

Tin-vacancy acceptor levels in electron-irradiated n-type silicon

et al. 2000

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Document VersionPublisher's PDF, also known as Version of record Link back to DTU Orbit Citation (APA): Larsen, A. N., Goubet, J. J., Mejlholm, P., Christensen, J. S., Fanciulli, M., Gunnlaugsson, H. P., ... Dannefaer, S. (2000). Tin-vacancy acceptor levels in electron-irradiated n-type silicon. Physical Review B Condensed Matter, 62(7), 4535-4544. DOI: 10.1103/PhysRevB.62.4535 Tin-vacancy acceptor levels in electron-irradiated n-type silicon 18 Sn/cm 3 were irradiated with 2-MeV electrons to different doses and subsequently studied by deep level transient spectroscopy, Mössbauer spectroscopy, and positron annihilation. Two tin-vacancy ͑Sn-V͒ levels at E c Ϫ0.214 eV and E c Ϫ0.501 eV have been identified ͑E c denotes the conduction band edge͒. Based on investigations of the temperature dependence of the electron-capture cross sections, the electric-field dependence of the electron emissivity, the anneal temperature, and the defect-introduction rate, it is concluded that these levels are the double and single acceptor levels, respectively, of the Sn-V pair. These conclusions are in agreement with electronic structure calculations carried out using a local spin-density functional theory, incorporating pseudopotentials to eliminate the core electrons, and applied to large H-terminated clusters. Thus, the Sn-V pair in Si has five different charge states corresponding to four levels in the band gap.

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Section: Introductionsupporting

confidence: 85%

Tin-vacancy acceptor levels in electron-irradiated n-type silicon

et al. 2000

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“…After the irradiation, the following stable defects have been identified in silicon (see References [1,3]):…”

Section: Production Of Primary Defects and Their Kineticsmentioning

confidence: 99%

“…In this paper, the terminology and definitions in agreement with M. Lannoo and J. Bourgoin [1] are used in relation to defects.…”

Section: Introductionmentioning

confidence: 99%

Microscopic modelling of defects production and their annealing after irradiation in silicon for HEP particle detectors

Lazanu

Bruzzi

2003

Nuclear Instruments and Methods in Physics Research Section A:

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In this contribution, the production of defects in radiation fields and their evolution toward equilibrium in silicon for detector uses has been modelled. In the quantitative model developed, the generation rate of primary defects is calculated starting from the projectile -silicon interaction and from recoil energy redistribution in the lattice. Vacancy-interstitial annihilation, interstitial migration to sinks, divacancy and vacancy-impurity complex (V P , V O, V 2 O, C i O i and C i C s ) formation are considered.The results of the model support the experimental available data.The correlation between the initial material parameters, temperature, irradiation and annealing history is established. The model predictions could be a useful clue in obtaining harder materials for detectors at the new generation of accelerators or for space missions. PACS:61.80.Az: Theory and models of radiation effects. 61.70.At: Defects formation and annealing processes. 29.40.Pe: Semiconductor detectors.

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“…A constant value of ␣ FP at different temperatures combined with an emission rate that varies linearly with the square root of the electric field strongly indicates the presence of Frenkel-Poole barrier reduction. 18 The value of ␣ PF calculated from Fig. 4 is only slightly smaller than the theoretical value for GaAs of 4ϫ10 Ϫ4 (eV 2 cm/V͒ 1/2 .…”

Section: Resultsmentioning

confidence: 62%

Incorporation of optically active erbium into GaAs using the novel precursor tris(3,5-di-tert-butylpyrazolato)bis(4-tert-butylpyridine)erbium

Cederberg

Culp

Bieg

et al. 1999

Journal of Applied Physics

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We have investigated the use of an alternative erbium precursor, tris͑3,5-di-tert-butylpyrazolato͒bis͑4-tert-butylpyridine͒erbium, to dope erbium into GaAs. The incorporated erbium forms an optically active center identified as Er-2O. The GaAs:Er formed using this precursor exhibits sharper and more intense optical emission, attributed to the Er-2O center, than that previously found with cylcopentadienyl-based erbium sources. Codoping GaAs:Er with shallow donors results in a quenching of the erbium-related luminescence, while codoping with shallow acceptors results in no significant change in the spectrum. Mechanisms for the observed luminescence-quenching behavior are discussed. Deep level transient spectroscopy performed on silicon or selenium codoped GaAs:Er showed the presence of several electron traps in the upper half of the band gap. The origins of these electron traps are considered.

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Point Defects in Semiconductors II

Cited by 420 publications

References 0 publications

Tin-vacancy acceptor levels in electron-irradiated n-type silicon

Tin-vacancy acceptor levels in electron-irradiated n-type silicon

Microscopic modelling of defects production and their annealing after irradiation in silicon for HEP particle detectors

Incorporation of optically active erbium into GaAs using the novel precursor tris(3,5-di-tert-butylpyrazolato)bis(4-tert-butylpyridine)erbium

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