Polarisation-independent LiNbO
            <sub>3</sub>
            , 4×4 matrix switch

Nishimoto, Hiroyuki; Suzuki, S.; Kondo, M.

doi:10.1049/el:19880763

Cited by 22 publications

(3 citation statements)

References 3 publications

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“…The fibre-to-fibre insertion loss is 4-6 dB, and is uniform across the matrix. In other configurations, crosstalk can be improved at the expense of complexity (Spanke 1986) and recently, a 4 x 4 tree-structure (figure 5) polarization independent matrix ) (figure 7) as well as a 4 x 4 polarization independent duobanyan structure (Nishimoto et al 1988) have been reported. The former matrix architecture allows communicative as well as distributive switching, gives excellent crosstalk performance {ca.…”

Section: Space Switchesmentioning

confidence: 99%

“…(1988^) is based on the novel switch design of Granestrand (1988 a) tolerant to fabrication errors to increase yield. The duobanyan array (Nishimoto et al 1988) only utilizes three cascaded levels, making lower switch voltages possible, at the expense of intrinsically worse crosstalk properties.…”

Section: Space Switchesmentioning

confidence: 99%

“…The reason for the interest in space switches is their 'frequency and code transparency': lowfrequency electrical signals can route optical signals, practically irrespective of their frequency contents and code format. As an example, dispersion will limit the achievable bandwidth to above 1 THz for a 10 cm propagation length in LiN b03 for a polarization dependent device, and to 10 GHz in a polarization independent device as in Nishimoto et al (1988). In both cases, however, the total bandwidth is of the order of 40 nm.…”

Section: Strictlymentioning

confidence: 99%

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Lithium niobate devices in switching and multiplexing

Thylén

1989

Phil. Trans. R. Soc. Lond. A

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Integrated-optics devices in lithium niobate have reached a significant maturity in recent years, and several complex devices have been demonstrated. In addition to performing modulation of light in fibre-optic transmission systems, lithium niobate devices currently offer the only components for photonic switching. Thus lithium niobate devices can be used as spatial, temporal and wavelength switches in high-speed and low-speed systems. In these systems electronic signals control the lithium niobate switches, which process the optical information and which are optically interfaced to optical fibres. Hence I am not concerned with all-optical switching. Examples of applications are multiplexing and demultiplexing of high-speed data streams, bit-by-bit or word-by-word switching in, for example, time-space-time stages or in access couplers in high-speed bus systems. Switch arrays, generally operating at lower speeds (below 1 GHz), can be used for network rearrangement, digital crossconnect, protection switching and generally in situations where the frequency and code transparency of the devices can be used to advantage. The status of lithium niobate devices for switching is reviewed, and performance limitations (including those imposed by polarization properties) and trade-offs are discussed, emphasizing time- and space-switching devices and applications.

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Section: Space Switchesmentioning

confidence: 99%

Section: Space Switchesmentioning

confidence: 99%

Section: Strictlymentioning

confidence: 99%

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Lithium niobate devices in switching and multiplexing

Thylén

1989

Phil. Trans. R. Soc. Lond. A

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Theoretical and experimental studies of electric‐field‐induced refractive index change in quantum‐film, ‐wire, and ‐box structures

Ravikumar

Aizawa

Shimomura

et al. 1994

Micro & Optical Tech Letters

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In this article we report theoretical as well as experimental studies of the electric‐field‐induced refractive index change in InGaAs/InP quantum‐well structures, viz., quantum‐film, quantum‐wire, and quantum‐box structures. The refractive index change, easily measured using a Mach‐Zehnder interferometer setup, was around 1%, 4%, and 7% in quantum film, quantum wire, and quantum box, respectively, in the longer‐wavelength region corresponding to the positive refractive index change peak. Moreover, we will discuss that the refractive index change dependency on the polarization of incident light in a quantum film can be controlled by introducing suitable tensile strain in it. It was found that for a well width of 11 nm, 0.3% tensile strain should be induced to obtain polarization‐independent refractive index change. © 1994 John Wiley & Sons, Inc.

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