Polarity and Its Influence on Growth Mechanism during MOVPE Growth of GaN Sub-micrometer Rods

Li, S. F.; Fuendling, S.; Wang, X.; Merzsch, Stephan; Al-Suleiman, M.; Wei, Jiandong; Wehmann, H.-H.; Waag, A.; Bergbauer, Werner; Straßburg, Martin

doi:10.1021/cg101537m

Cited by 123 publications

(160 citation statements)

References 26 publications

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“…39 A similar growth model of nanorod morphology depending on the MBE system geometry was also proposed by Galopin et al 40 In the last 2 years, the polarity of GaN nanorods became an attractive topic. [41][42][43][44][45] To determine the polarity of the GaN nanorods, many methods were employed, for example, convergent beam electron diffraction (CBED), 46,47 electron energy loss spectra (EELS), 48 probe Cs corrected transmission electron microscopy measurement, 49 Kelvin probe force microscopy (KPFM), 50 piezoresponse force microscopy (PFM), 51 coaxial impact-collision ion scattering spectroscopy (CAICISS) analysis, 52 circular photogalvanic effect (CPGE), 53 and wet chemical etching. 54 Most of them are also suitable for polarity measurement of the nanorod structure.…”

Section: B Catalyst-free Gan Nanorod Growthmentioning

confidence: 99%

“…However, different polar surfaces induce different surface chemical reactivity, which is important, e.g., in the case of the impurity doping, 55,56 dopant incorporation, 57,58 surface reaction with gas, 59 and growth morphology of the GaN nanorods. 39,42 There are already numerous investigations reported on two-dimensional GaN layers with different polarities concerning these topics. However, such kind of investigation has not been extensively performed on nanorods, partly due to the difficulty in nanoscale characterization.…”

Section: B Catalyst-free Gan Nanorod Growthmentioning

confidence: 99%

“…41 The polarity of GaN nanorods was found to be critical for the morphology of the nanostructures by several groups. 42,44,84,85 Chen et al employed convergent beam electron diffraction to investigate the polarity of GaN rods selectively grown by MOVPE using SiNx as mask material. 84 They show the coexistence of N-and Ga-polarities in GaN nanorods: the central part is N-polar while inclined facets are Ga-polar.…”

Section: B Mocvd Growthmentioning

confidence: 99%

“…Li et al compared the GaN sub-micrometer rod growth on patterned SiO 2 /sapphire, SiO 2 /GaN with both N-polar, and Ga-polar orientations. 42 The growth patterns were defined by nanoimprint or photolithography and inductively coupled plasma dry etching. The polarities of the GaN or GaN/sapphire templates are determined by Kelvin probe force microscopy.…”

Section: B Mocvd Growthmentioning

confidence: 99%

“…42 It has been pointed out by several publications that hydrogen can passivate the N-terminated surfaces, i.e., f000-1g and f10-11g r-plane surfaces. [88][89][90] Figures 21(a) and 21(b) depict the atomic structure of GaN with Ga-polar and N-polar surfaces as a ball-and-stick model.…”

Section: B Mocvd Growthmentioning

confidence: 99%

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GaN based nanorods for solid state lighting

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In recent years, GaN nanorods are emerging as a very promising novel route toward devices for nano-optoelectronics and nano-photonics. In particular, core-shell light emitting devices are thought to be a breakthrough development in solid state lighting, nanorod based LEDs have many potential advantages as compared to their 2 D thin film counterparts. In this paper, we review the recent developments of GaN nanorod growth, characterization, and related device applications based on GaN nanorods. The initial work on GaN nanorod growth focused on catalyst-assisted and catalyst-free statistical growth. The growth condition and growth mechanisms were extensively investigated and discussed. Doping of GaN nanorods, especially p-doping, was found to significantly influence the morphology of GaN nanorods. The large surface of 3 D GaN nanorods induces new optical and electrical properties, which normally can be neglected in layered structures. Recently, more controlled selective area growth of GaN nanorods was realized using patterned substrates both by metalorganic chemical vapor deposition (MOCVD) and by molecular beam epitaxy (MBE). Advanced structures, for example, photonic crystals and DBRs are meanwhile integrated in GaN nanorod structures. Based on the work of growth and characterization of GaN nanorods, GaN nanoLEDs were reported by several groups with different growth and processing methods. Core/shell nanoLED structures were also demonstrated, which could be potentially useful for future high efficient LED structures. In this paper, we will discuss recent developments in GaN nanorod technology, focusing on the potential advantages, but also discussing problems and open questions, which may impose obstacles during the future development of a GaN nanorod based LED technology.

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