Polarity governs atomic interaction through two-dimensional materials

Kong, Wei; Li, Huashan; Qiao, Kuan; Kim, Yunjo; Lee, Kyusang; Nie, Yifan; Lee, Doyoon; Osadchy, T.; Molnar, R. J.; Gaskill, D. Kurt; Myers-Ward, Rachael L.; Daniels, Kevin M.; Zhang, Yuewei; Sundram, Suresh; Yu, Yan; Bae, Sang‐Hoon; Rajan, Siddharth; Shao‐Horn, Yang; Cho, Kyeongjae; Ougazzaden, A.; Grossman, Jeffrey C.; Kim, Jeehwan

doi:10.1038/s41563-018-0176-4

Cited by 209 publications

(289 citation statements)

References 44 publications

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“…For example, a small amount of oxygen is proposed to reduce the nucleation density of MoS 2 and prevent MoO 3 from being poisoned during the growth, and thus prolongs the lifetime of the MoO 3 precursors and enables the growth of large MoS 2 domains . On the other hand, we can utilize the as‐grown single‐crystal graphene as an ideal buffer layer in the epitaxial growth of other 2D materials . Recently, the epitaxy growth of high‐quality AlN film on single‐crystal graphene has been reported .…”

Section: Discussionmentioning

confidence: 99%

“…40 On the other hand, we can utilize the as-grown single-crystal graphene as an ideal buffer layer in the epitaxial growth of other 2D materials. 16,102,103 Recently, the epitaxy growth of high-quality AlN film on single-crystal graphene has been reported. 16 Further work is required for the synthesis of various high-quality wafer-scale 2D materials.…”

Section: Discussionmentioning

confidence: 99%

“…Since the high-quality wafer-scale graphene has been produced by many approaches, it can be used as an ideal buffer layer to epitaxially grow other 2D materials like group III nitrides. 16,102,103 Recently, Chen et al 16 successfully prepared a high-quality aluminum nitride (AlN) film on graphene and fabricated high-performance deep-ultraviolet light-emitting diodes. AlN has a weak interaction with graphene, which effectively reduces the mismatch effect.…”

Section: Other Approachesmentioning

confidence: 99%

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Vapor‐phase growth of high‐quality wafer‐scale two‐dimensional materials

Tong

Liu

Zeng

et al. 2019

InfoMat

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Emerging two‐dimensional (2D) materials have stimulated tremendous scientific and industrial interests due to their diverse and tunable physical, chemical, and mechanical properties. The scalable production of high‐quality wafer‐scale 2D materials has become significantly essential to bring us closer to practical industrial applications, particularly in electronic devices. Vapor‐phase growth provides attractive opportunities for the synthesis of large‐area and high‐quality 2D materials. In this review, we will emphasize vapor‐phase growth strategies from three aspects, including suppressing nucleation, seamless stitching, and evolutionary selection growth. We discuss the general understanding of the related fundamental mechanism and specific parameter optimization from precursors and substrate design to the adjusting of growth parameters (temperature and pressure). Meanwhile, we present other strategies to produce various kinds of wafer‐scale 2D materials. Finally, we conclude the current challenges and future directions in this developing field. This work may inspire researchers to better design routes in the synthesis of wafer‐scale 2D materials with high quality.

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Section: Discussionmentioning

confidence: 99%

Section: Discussionmentioning

confidence: 99%

Section: Other Approachesmentioning

confidence: 99%

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Vapor‐phase growth of high‐quality wafer‐scale two‐dimensional materials

Tong

Liu

Zeng

et al. 2019

InfoMat

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“…The authors' approach uses a technique known as remote epitaxy [7][8][9] , in which the epitaxial film and the substrate are separated by a few sheets of the two-dimensional material graphene ( Fig. 1a).…”

mentioning

confidence: 99%

“…Potential-energy fields produced by atoms in the substrate can penetrate the graphene and transmit information about the substrate's crystal lattice, enabling the epitaxial growth of high-quality films. The field penetrability is proportional to the strength of ionic bonds in the substrate material 8 . A film grown in this way can be easily removed (exfoliated) from the graphene because the two materials are coupled by only weak van der Waals forces ( Fig.…”

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confidence: 99%

A platform for making and transferring oxide films

Tsukazaki

2020

Nature

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Establishing Epitaxial Connectedness in Multi‐Stacking: The Survival of Thru‐Holes in Thru‐Hole Epitaxy

Lee,

Choi

et al. 2023

Adv Eng Mater

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Thru‐hole epitaxy has recently been reported to be able to grow readily detachable domains crystallographically aligned with the underlying substrate over 2D mask material transferred onto a substrate. [Jang et al., Adv. Mater. Interfaces 2023, 10, 2201406] While the experimental demonstration of thru‐hole epitaxy of GaN over multiple stacks of h‐BN was evident, the detailed mechanism of how small holes in each stack of h‐BN survived as thru‐holes during multiple stacking of h‐BN was not intuitively clear. Here, Monte Carlo simulations is used to investigate the conditions under which holes in each stack of 2D mask layers can survive as thru‐holes during multiple stacking. If holes are highly anisotropic in shape by connecting smaller holes in a particular direction, thru‐holes can be maintained with a high survival rate per stack, establishing more epitaxial connectedness. Our work verifies and supports that thru‐hole epitaxy is attributed to the epitaxial connectedness established by thru‐holes surviving even through multiple stacks.

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Polarity governs atomic interaction through two-dimensional materials

Cited by 209 publications

References 44 publications

Vapor‐phase growth of high‐quality wafer‐scale two‐dimensional materials

Vapor‐phase growth of high‐quality wafer‐scale two‐dimensional materials

A platform for making and transferring oxide films

Establishing Epitaxial Connectedness in Multi‐Stacking: The Survival of Thru‐Holes in Thru‐Hole Epitaxy

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