Polarizabilities of shallow donors in inverse V-shaped quantum wells under laser field

Laser field dependence of intersubband transition in inverse V‐shaped quantum wells

“…We consider an IVQW (Fig. 1) for which the confinement potential is given by 20: Here σ = x b / x c ( x b is the constant Al concentration in the barriers and x is the Al concentration at the well center), V 0 is the conduction band discontinuity, and L is the width of the quantum well.…”

Intense laser field effects on the electron Raman scattering in a strained InGaN/GaN quantum well

“…Recently, the effects of intense laser field on the electronic and optical properties of conventional unstrained GaAs QWs have been investigated in several works [8,[40][41][42][43][44][45][46][47][48][49][50][51][52][53][54]. Overall, these studies concluded that the energy levels and intersubband optical transitions in QWs with different shapes can be significantly controlled and modified by an intense laser field.…”

Oscillation of Electron Mobility in V‐Shaped Double Quantum Well Structure Under Applied Electric Field

“…In recent years, there is considerable interest in the study of semiconductor quantum well (QW) structures having different shapes of confinement potentials, viz., square, parabolic, graded, V-shaped, inverse parabolic, triangular, etc., because of their applications in devices. [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18] The change in the potential profile of a quantum well affects the subband energy states. Therefore, it is possible to manipulate the electronic properties of the two-dimensional electron gas (2DEG) systems by suitably varying the shape of the confinement potential to improve the device characteristics.…”