Polarization-Independent Modulator by Partly Tilted Graphene-Induced Electro-Absorption Effect

Ye, Shengwei; Dong, Liang; Lu, Rongguo; Shah, Manoj Kumar; Zou, Xinhai; Yuan, Fei; Yang, Fan; Liu, Yong

doi:10.1109/lpt.2016.2624747

Cited by 28 publications

(13 citation statements)

References 18 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Although the polarization-independent electro-optic modulator based on graphene has been reported [ 15 – 21 ], the polarization independence of these devices is closely related to wavelength [ 22 ]. Therefore, in our model, the U-structure is used, in which we find that the sensitivity of the waveguide polarization is weak correlation with wavelength.…”

Section: Resultsmentioning

confidence: 99%

Graphene-Based Polarization-Independent Mid-Infrared Electro-Absorption Modulator Integrated in a Chalcogenide Glass Waveguide

Zhou

Wang

et al. 2021

Nanoscale Res Lett

Self Cite

View full text Add to dashboard Cite

A polarization-insensitive graphene-based mid-infrared optical modulator is presented that comprised SiO2/ Ge23Sb7S70, in which two graphene layers are embedded with a semiellipse layout to support transverse magnetic (TM) and transverse electric (TE) polarizing modes with identical absorption. The key performance index for the polarization independent modulator is polarization-sensitivity loss (PSL). The waveguide of our device just supports basic TE and TM modes, and the PSL between two modes is of < 0.24 dB. The model can offer extinction ratio (ER) more than 16 dB and insertion loss less than 1 dB. The operation spectrum ranges from 2 to 2.4 μm with optical bandwidth of 400 nm. The 3 dB modulation bandwidth is as high as 136 GHz based on theoretical calculation.

show abstract

Section: Resultsmentioning

confidence: 99%

Graphene-Based Polarization-Independent Mid-Infrared Electro-Absorption Modulator Integrated in a Chalcogenide Glass Waveguide

Zhou

Wang

et al. 2021

Nanoscale Res Lett

Self Cite

View full text Add to dashboard Cite

show abstract

“…Besides the above-analyzed optical properties of the proposed hybrid graphene-silicon-based polarization-insensitive EAM, its corresponding electrical characteristics are also critical, such as the 3 dB modulation bandwidth ( f 3dB ) and the energy consumption ( E ), which are associated with the total capacitance ( C ) and resistance ( R ) of the optical device, f 3dB = 1/(2 πRC ), E = CV 2 /4 ( V stands for the switching voltage between “OFF” and “ON” states) [ 40 , 42 ]. Here, we estimated the electrical characteristics of the proposed EAM using the parallel plate capacitor and the equivalent electrical circuit model for simplicity [ 27 , 28 , 29 ]. By considering the multilayer hybrid graphene-silicon waveguide structure and the overlapping region between graphene layers, the total resistance of the device is estimated to be ~80 Ω (including the graphene sheet resistance and the metal-graphene contact resistance) and the total capacitance ( C ) is estimated to be ~326 fF.…”

Section: Resultsmentioning

confidence: 99%

“…Meanwhile, hexagonal boron nitride (hBN) was used as the spacer or insulating layer to encapsulate graphene layers and maintain the high carrier mobility of graphene [30]. By optimizing the dimensions of all hybrid graphene-silicon waveguide layers, polarization-insensitive modulation was realized with an ME of ~1.11 dB/µm and an ME discrepancy of lower than 0.006 dB/µm for both polarizations, which are better than previous reports [28,29]. We then propose a hybrid graphene-silicon-based polarization-insensitive EAM with a modulation length of 20 µm.…”

Section: Introductionmentioning

confidence: 99%

“…It is therefore necessary to develop polarization-independent or polarization-insensitive high performance graphene-based optical modulators. By transferring graphene layers on an isosceles trapezoid silicon nanowire and capping with another silicon nanowire, a polarization-independent EAM has been proposed, with an extinction ratio (ER) higher than 20 dB in a length of 30 µm [ 28 ]. However, its ER discrepancy for the two polarizations is high (~2.3 dB) and the precise control of the slanted angle of the silicon nanowire might pose challenges for practical fabrication processes.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Hybrid Graphene-Silicon Based Polarization-Insensitive Electro-Absorption Modulator with High-Modulation Efficiency and Ultra-Broad Bandwidth

Kang

et al. 2019

Nanomaterials

View full text Add to dashboard Cite

Polarization-insensitive modulation, i.e., overcoming the limit of conventional modulators operating under only a single-polarization state, is desirable for high-capacity on-chip optical interconnects. Here, we propose a hybrid graphene-silicon-based polarization-insensitive electro-absorption modulator (EAM) with high-modulation efficiency and ultra-broad bandwidth. The hybrid graphene-silicon waveguide is formed by leveraging multi-deposited and multi-transferred methods to enable light interaction with graphene layers in its intense field distribution region instead of the commonly used weak cladding region, thus resulting in enhanced light–graphene interaction. By optimizing the dimensions of all hybrid graphene-silicon waveguide layers, polarization-insensitive modulation is achieved with a modulation efficiency (ME) of ~1.11 dB/µm for both polarizations (ME discrepancy < 0.006 dB/µm), which outperforms that of previous reports. Based on this excellent modulation performance, we designed a hybrid graphene-silicon-based EAM with a length of only 20 µm. The modulation depth (MD) and insertion loss obtained were higher than 22 dB and lower than 0.23 dB at 1.55 µm, respectively, for both polarizations. Meanwhile, its allowable bandwidth can exceed 300 nm by keeping MD more than 20 dB and MD discrepancy less than 2 dB, simultaneously, and its electrical properties were also analyzed. Therefore, the proposed device can be applied in on-chip optical interconnects.

show abstract

“…The two graphene layers, which are separated by a 10 nm thick Si 3 N 4 spacer, are also surrounded by an outer waveguide with the width and height of 800 nm and 800 nm. For fabrication, it is better to replacing the rectangular silicon-graphene waveguide with a slanted silicon-graphene waveguide for the inner waveguide [22]. Metal electrodes are in contact with the graphene layers, so that the two graphene layers can form capacitor structures.…”

Section: Polarization-insensitive Waveguide Structurementioning

confidence: 99%

Polarization-Insensitive Phase Modulators Based on an Embedded Silicon-Graphene-Silicon Waveguide

Zou

Zhang

et al. 2019

Applied Sciences

Self Cite

View full text Add to dashboard Cite

A polarization-insensitive phase modulator concept is presented, based on an embedded silicon-graphene-silicon waveguide. Simulation results show that the effective mode index of both transverse electric (TE) and transverse magnetic (TM) modes in the silicon-graphene-silicon waveguide undergoes almost the same variations under different biases across a broad wavelength range, in which the real-part difference is less than 1.2 × 10 −3 . Based on that, a polarization-insensitive phase modulator is demonstrated, with a 3-dB modulation bandwidth of 135.6 GHz and a wavelength range of over 500 nm. Moreover, it has a compact size of 60 µm, and a low insertion loss of 2.12 dB. The proposed polarization-insensitive waveguide structure could be also applied to Mach-Zehnder modulators and electro-absorption modulators.

show abstract

Polarization-Independent Modulator by Partly Tilted Graphene-Induced Electro-Absorption Effect

Cited by 28 publications

References 18 publications

Graphene-Based Polarization-Independent Mid-Infrared Electro-Absorption Modulator Integrated in a Chalcogenide Glass Waveguide

Graphene-Based Polarization-Independent Mid-Infrared Electro-Absorption Modulator Integrated in a Chalcogenide Glass Waveguide

Hybrid Graphene-Silicon Based Polarization-Insensitive Electro-Absorption Modulator with High-Modulation Efficiency and Ultra-Broad Bandwidth

Polarization-Insensitive Phase Modulators Based on an Embedded Silicon-Graphene-Silicon Waveguide

Contact Info

Product

Resources

About