Polaronic relaxation in perovskites

Bidault, O.; Maglione, Mario; Actis, M.; Kchikech, Mustapha; Salce, B.

doi:10.1103/physrevb.52.4191

Cited by 262 publications

(159 citation statements)

References 19 publications

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“…This type of dipole relaxation is responsible for most of the observed dipole dispersions, such as, in doped quantum ferroelectrics KTaO 3 , SrTiO 3 , etc., as discussed in reference 1.…”

Section: Introductionmentioning

confidence: 99%

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Unusual Dielectric Relaxation in Lightly Doped n-Type Rhombohedral BaTi_0.85Zr_0.15O₃:Ta Ferroelectric Ceramics

Itoh

2005

Chem. Mater.

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The dielectric properties of tantalum doped BaTi 0.85 Zr 0.15 O 3 were investigated. The conventional solid state reaction method was used to make the ceramic samples. The composition was close to the pinch point of the three structure phase transitions in BaTiO 3 . Powder X-ray diffraction result indicated that the samples were in very slightly distorted rhombohedral structure at room temperature, and the dielectric measurement showed only cubic-to-rhombohedral phase transition occurred. Instead of a sharp peak characteristic of a ferroelectric (FE) transition, the large dielectric response was similar to those in nonferroelectric perovskites CaCu 3 Ti 4 O 12 , AFe 1/2 B 1/2 O 3 (A=Ba, Sr, Ca; B=Nb, Ta, Sb) and IBLC (Internal Barrier Layer Capacitance) BaTiO 3 based FE ceramics. However, unlike its FE analogue, the conventional BaTiO 3 based IBLC ceramics, our samples showed weaker temperature dependence of relative permittivity which spans over a wide temperature range. A Maxwell-Wagner type relaxation in the FE state was observed. Moreover, another relaxation mode appears from the vicinity of FE phase transition temperature T C , and extends over a narrow temperature range, with unusual slowing down of relaxation rate as temperature rises, which is contrary to what is commonly observed. We associate these unusual phenomena with the very slightly distorted rhombohedral structure of our samples and the presence of the grain boundary barrier layer where oxygen vacancies distribute non-homogeneously.

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“…This type of dipole relaxation is responsible for most of the observed dipole dispersions, such as, in doped quantum ferroelectrics KTaO 3 , SrTiO 3 , etc., as discussed in reference 1.…”

Section: Introductionmentioning

confidence: 99%

“…The hopping of charge carriers (electrons and polarons), is also shown to make much contribution to dielectric response other than conductivity, [2][3] and may interact with the relaxing species in the lattice, resulting in diffuse dielectric anomalies. 2 The charge carriers may be from dopant ions and/or oxygen vacancies.…”

Section: Introductionmentioning

confidence: 99%

Unusual Dielectric Relaxation in Lightly Doped n-Type Rhombohedral BaTi_0.85Zr_0.15O₃:Ta Ferroelectric Ceramics

Itoh

2005

Chem. Mater.

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“…It should be pointed out that the transfer of polaron in ferroelectrics also has the dielectric response similar to what has been observed above. But the activation energy for transfer of polaron is lower than the value calculated from our samples in the order of magnitude (Bidault, 1995). Therefore, the possible contribution from the transfer of polaron is excluded.…”

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confidence: 73%

Electrical Processes in Polycrystalline BiFeO3 Film

Li¹,

Hu²,

Chu³

2011

Ferroelectrics - Characterization and Modeling

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“…Therefore, the suitable equivalent circuit for our junctions should be much more complicated if the dielectric relaxations observed here originate from the MW effect. Another possible origin for these dielectric relaxations is the contribution from small polarons in manganite films 2,9,10 . From this viewpoint, the similar temperature/ magnetic field dependences for relaxation time τ and dc resistance observed here indicate the dominant role of polaronic charge carriers in both ac dielectric and dc electrical transport properties.…”

Section: Resultsmentioning

confidence: 99%

“…Recently, several works have been devoted for study of dielectric properties in correlated electron oxides and the close relation has been revealed between dielectric response and electrical transport properties [7][8][9][10][11][12][13][14][15] . Most of these dielectric measurements have been done for bulk materials.…”

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confidence: 99%

Dynamics of multiple phases in a colossal-magnetoresistive manganite as revealed by dielectric spectroscopy

et al. 2012

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Electronic phase separation is one of the key features in correlated electron oxides. The coexistence and competition of multiple phases give rise to gigantic responses to tiny stimuli producing dramatic changes in magnetic, transport and other properties of these compounds. To probe the physical properties of each phase separately is crucial for a comprehensive understanding of phase separation phenomena and for designing their device functions. Here we unravel, using a unique p-n junction configuration, dynamic properties of multiple phases in manganite thin films. The multiple dielectric relaxations have been detected and their corresponding multiple phases have been identified, while the activation energies of dielectric responses from different phases were extracted separately. Their phase evolutions with changing both temperature and applied magnetic field have been demonstrated by dielectric response. These results provide a guideline for exploring the electronic phase separation phenomena in correlated electron oxides.

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Polaronic relaxation in perovskites

Cited by 262 publications

References 19 publications

Unusual Dielectric Relaxation in Lightly Doped n-Type Rhombohedral BaTi_0.85Zr_0.15O₃:Ta Ferroelectric Ceramics

Unusual Dielectric Relaxation in Lightly Doped n-Type Rhombohedral BaTi_0.85Zr_0.15O₃:Ta Ferroelectric Ceramics

Electrical Processes in Polycrystalline BiFeO3 Film

Dynamics of multiple phases in a colossal-magnetoresistive manganite as revealed by dielectric spectroscopy

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Polaronic relaxation in perovskites

Cited by 262 publications

References 19 publications

Unusual Dielectric Relaxation in Lightly Doped n-Type Rhombohedral BaTi0.85Zr0.15O3:Ta Ferroelectric Ceramics

Unusual Dielectric Relaxation in Lightly Doped n-Type Rhombohedral BaTi0.85Zr0.15O3:Ta Ferroelectric Ceramics

Electrical Processes in Polycrystalline BiFeO3 Film

Dynamics of multiple phases in a colossal-magnetoresistive manganite as revealed by dielectric spectroscopy

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Product

Resources

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Unusual Dielectric Relaxation in Lightly Doped n-Type Rhombohedral BaTi_0.85Zr_0.15O₃:Ta Ferroelectric Ceramics

Unusual Dielectric Relaxation in Lightly Doped n-Type Rhombohedral BaTi_0.85Zr_0.15O₃:Ta Ferroelectric Ceramics