The melting-induced change in density of physical network junctions, which are formed by chain entanglements and network junctions due to anchoring of chain segments to crystals, is studied by 1 H NMR T 2 relaxometry for solution-and melt-crystallized ultra-high molecular weight polyethylene (UHMWPE) -sc-UH and mc-UH, respectively. The NMR results are complemented by real-time synchrotron WAXS and SAXS analyses to extract the sizes of the crystalline lamellae and inter-crystalline domains. Below the melting temperature, the network of physical junctions is denser in the amorphous phase of mc-UH than the one in sc-UH owing to lower entanglement density and smaller number of physical junctions from polymer crystals in sc-UH. However, the difference in the total density of physical junctions between mc-UH and sc-UH films decreases with decreasing crystallinity during melting. At the end of the melting trajectory, at vanishing crystallinity, the volume-average entanglement density, as characterized by the NMR method, is approximately the same in sc-and mc-UH. This indicates that the entanglement density in sc-UH films increases during melting owing to fast buildup of local chain entanglements. These entanglements are formed by segments of the same chain, neighboring chains, or the both due to a displacement of chain fragments upon lamellar thickening and due to the so-" p " that occurs locally in the amorphous domains. The increase in the entanglement density in sc-UH is additionally confirmed by solid-state drawability of sc-UH films that were annealed in the melting region but below the end of melting. The maximum draw ratio decreases and the drawing stress increases with increasing annealing temperature.