Pore morphology of low-k SiCxNy films prepared with a cyclic silazane precursor using plasma-enhanced chemical vapor deposition

Tu, Hung-En; Su, Chun‐Jen; Jeng, U‐Ser; Leu, Jihperng

doi:10.1016/j.tsf.2015.07.036

Cited by 4 publications

(8 citation statements)

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“…On the other hand, the k values of the pV3N3 and pV4N4 layers were evaluated to 4.2 ± 0.1 and 3.7 ± 0.1, respectively. While the dense silicon dioxide (SiO 2 ) has a k SiO 2 = 4.0 ± 0.1, the silicon carbonitride (SiC x N y ) has a k SiC x N y = 4.5–5.5 . Consequently, the low dielectric constant ( k < 4) of the pV3D3, pV4D4, and pV4N4 must stem from the ability of the AP-PiCVD process to preserve the ring’s structure of the selected monomers.…”

Section: Resultsmentioning

confidence: 99%

Atmospheric-Pressure Synthesis of Atomically Smooth, Conformal, and Ultrathin Low-k Polymer Insulating Layers by Plasma-Initiated Chemical Vapor Deposition

Ondo

Loyer

Werner

et al. 2019

ACS Appl. Polym. Mater.

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The straightforward synthesis of ultrathin low dielectric constant insulating polymer layers from four cyclic organosilicon monomers (i.e., two organocyclosiloxanes and two organocyclosilazanes) by atmospheric pressure plasma-initiated chemical vapor deposition (AP-PiCVD) is demonstrated. The combination of ultrashort plasma pulses (ca. 100 ns), as polymerization initiator, with long plasma off-times (10 ms), yields the formation of atomically smooth and conformal polymer layers with excellent insulating properties. Leakage current densities of 10–9 A cm– 2 are measured for film thicknesses as low as 12 nm. Low dielectric constants are obtained because of the retention of the cyclic structure of the monomers during the deposition. The polymer layers prepared from 1,3,5,7-tetramethyl-1,3,5,7-tetravinylcyclotrisiloxane display the lowest dielectric constant (k = 2.8). The present study demonstrates the ability to vary the dielectric constant of as-deposited polymer layers by varying the monomer bonds, i.e., siloxane and silazane, as well as their ring size.

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Section: Resultsmentioning

confidence: 99%

Atmospheric-Pressure Synthesis of Atomically Smooth, Conformal, and Ultrathin Low-k Polymer Insulating Layers by Plasma-Initiated Chemical Vapor Deposition

Ondo

Loyer

Werner

et al. 2019

ACS Appl. Polym. Mater.

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“…The detailed description of the SiC x N y film prepared by VSZ only can be found elsewhere. 12 When a small amount of porogen (<30% ECH loadings) was incorporated into the film, the porogens slightly increased the pore correlation distance (as listed in Table I), but did not disrupt the short-range ordered arrangement of pores. At ≥ 30% ECH loadings, the increase in porogen incorporation resulted in an enhanced randomness in porogen distribution in the films.…”

Section: Ftir Analysis Of Sic X N Y /Porogen Hybrid and Porous Sic X N Ymentioning

confidence: 99%

“…12 The porosity originated mainly from the intrinsic void in the cross-linked structure of the SiC x N y films. For SiC x N y /porogen hybrid films, the incorporated porogens consisting of cyclic ketone and smaller fragments and some of the organic components such as -CH 3 and -(CH 2 ) n -attached to SiC x N y matrix are thermally decomposed to CH 4 , CO 2 , H 2 O etc., which can readily diffuse out of the film.…”

Section: Ftir Analysis Of Sic X N Y /Porogen Hybrid and Porous Sic X N Ymentioning

confidence: 99%

“…For SiC x N y /porogen hybrid films, the incorporated porogens consisting of cyclic ketone and smaller fragments and some of the organic components such as -CH 3 and -(CH 2 ) n -attached to SiC x N y matrix are thermally decomposed to CH 4 , CO 2 , H 2 O etc., which can readily diffuse out of the film. As a result, a shorter Si-CH 2 -Si or Si-(CH 2 ) 2 -Si in the skeleton of SiC x N y film 12 as well as pore structure are formed as illustrated in Fig. 7b.…”

Section: Ftir Analysis Of Sic X N Y /Porogen Hybrid and Porous Sic X N Ymentioning

confidence: 99%

“…12 In order to explore and fabricate porous SiC x N y films with higher porosity, a sacrificial porogen, epoxycyclohexane (ECH) as illustrated in Fig. 1b, was added to the feed stream of the VSZ precursor in this study.…”

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Effect of Porogen Incorporation on Pore Morphology of Low-k SiC_xN_yFilms Prepared Using PECVD

Jeng

et al. 2014

ECS J. Solid State Sci. Technol.

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Low-k porous SiC x N y films were prepared through plasma-enhanced chemical vapor deposition, using 1,3,5-trimethyl-1,3,5-trivinylcyclotrisilazane (VSZ) as the matrix precursor and epoxycyclohexane (ECH) as a porogen. The effects of porogen loading and deposition temperature on porogen incorporation, pore morphology, and the properties of porous SiC x N y films were examined. In addition, the impact of film shrinkage and the corresponding nanopore structures after annealing were studied. The porosity of films deposited at 100 • C increased from 1.8% to 19.8% when ECH loading increased to 30%, above which the porosity remained nearly constant because of high film shrinkage. The pore size decreased slightly from 4.1 to 3.7 nm when ECH loading increased to 30%, above which the pores became larger and were broadly distributed. By contrast, increasing deposition temperature at 20% ECH loading decreased porogen incorporation and increased film density. The porosities and pore size of films decreased, respectively, when the deposition temperature increased. A short-range ordering of pores was observed only at low deposition temperatures because the N-Si-C cross-linked structures and organic phase were present. Optimized processing parameters facilitated the fabrication of low-k porous SiC x N y films exhibiting 19.8% porosity, 3.7-nm pores, a k value of 3.18, and an elastic modulus of 7. In CMOS backend interconnections, low-k etch-stop/dielectric barrier materials such as silicon carbonitride (SiC x N y ) (k = 4.5-5.5) and ultralow-dielectric-constant (ultralow-k, ULK) inter-layer dielectrics (ILDs) have been used to lower the effective capacitance (k eff ) in the 45 and 32 nm node and beyond.1 Silicon carbonitride films are typically prepared by performing plasma-enhanced chemical vapor deposition (PECVD) of multi-precursors such as silane/ammonia (or nitrogen)/methane 2,3 and trimethylsilane/amonia. 4 Recently, single source precursors such as hexamethyldisilazane 5 and BASICN 6 have been used for preparing dense low-k SiC x N y films by using PECVD because these films display low defects (i.e., low leakage current) and higher etch selectivity due to high C/Si ratio. 6 To further reduce the dielectric constant of silicon carbonitride film, incorporation of porosity is one of the primary approaches, in addition to continued addition of elements with lower polarizability such as more C atoms.A conservative approach was proposed by Nguyen et al., 7 who prepared a dielectric barrier bilayer of dense SiN y /porous SiC x N y , exhibiting 12% porosity, by performing plasma deposition of dimethylsilacyclopentane and NH 3 and then using UV to cure the samples. The dense films of the bilayer on top helped protect the underlying copper layer against plasma-induced damage and oxidation caused by the diffusion of oxygen, whereas the bottom porous film of the bilayer contributed to a reduction in the dielectric constant.8 Because they possess a bilayer (dense film/porous film) or sandwich (dense film/porous film/dense film) ...

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Organosilicon compounds as single-source precursors for SiCN films production

Ermakova

Косинова

2022

Journal of Organometallic Chemistry

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Pore morphology of low-k SiCxNy films prepared with a cyclic silazane precursor using plasma-enhanced chemical vapor deposition

Cited by 4 publications

References 28 publications

Atmospheric-Pressure Synthesis of Atomically Smooth, Conformal, and Ultrathin Low-k Polymer Insulating Layers by Plasma-Initiated Chemical Vapor Deposition

Atmospheric-Pressure Synthesis of Atomically Smooth, Conformal, and Ultrathin Low-k Polymer Insulating Layers by Plasma-Initiated Chemical Vapor Deposition

Effect of Porogen Incorporation on Pore Morphology of Low-k SiC_xN_yFilms Prepared Using PECVD

Organosilicon compounds as single-source precursors for SiCN films production

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Pore morphology of low-k SiCxNy films prepared with a cyclic silazane precursor using plasma-enhanced chemical vapor deposition

Cited by 4 publications

References 28 publications

Atmospheric-Pressure Synthesis of Atomically Smooth, Conformal, and Ultrathin Low-k Polymer Insulating Layers by Plasma-Initiated Chemical Vapor Deposition

Atmospheric-Pressure Synthesis of Atomically Smooth, Conformal, and Ultrathin Low-k Polymer Insulating Layers by Plasma-Initiated Chemical Vapor Deposition

Effect of Porogen Incorporation on Pore Morphology of Low-k SiCxNyFilms Prepared Using PECVD

Organosilicon compounds as single-source precursors for SiCN films production

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Effect of Porogen Incorporation on Pore Morphology of Low-k SiC_xN_yFilms Prepared Using PECVD