Porous layers on compensated GaAs:Cr

The laser induced etching of semi-insulating GaAs 〈100〉 is carried out to create porous structure under super-and sub-bandgap photon illumination (hν). The etching mechanism is different for these separate illuminations where defect states play the key role in making distinction between these two processes. Separate models are proposed for both the cases to explain the etching efficiency. It is observed that under sub-bandgap photon illumination the etching process starts vigorously through the mediation of intermediate defect states. The defect states initiate the pits formation and subsequently pore propagation occurs due to asymmetric electric field in the pore. Formation of GaAs nanostructures is observed using scanning electron (SEM) and atomic force microscopy (AFM).

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Wavelength dependent laser-induced etching of Cr-O doped GaAs: Morphology studies by SEM and AFM

Joshi

Islam

Mavi

et al. 2009

Bull Mater Sci

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Structural and luminescent characteristics of porous GaAs

Lebib

Amara

Béji

2017

Journal of Luminescence

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Laser-induced etching of CrO doped GaAs and wavelength dependent photoluminescence

Mavi

Islam

Rath

et al. 2004

Materials Chemistry and Physics

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Porous layers on compensated GaAs:Cr

Cited by 4 publications

References 9 publications

Wavelength dependent laser-induced etching of Cr-O doped GaAs: Morphology studies by SEM and AFM

Wavelength dependent laser-induced etching of Cr-O doped GaAs: Morphology studies by SEM and AFM

Structural and luminescent characteristics of porous GaAs

Laser-induced etching of CrO doped GaAs and wavelength dependent photoluminescence

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