Porous silicon as backing material for Capacitive Micromachined Ultrasonic Transducers

Lascaud, Julie; Boulme, Audren; Gross, D.; Bahette, Emilie; Defforge, Thomas; Alquier, Daniel; Gautier, Gaël; Certon, Dominique

doi:10.1109/ultsym.2016.7728626

Cited by 2 publications

(1 citation statement)

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“…The electrical contact, which is commonly connected to the non-porous face (corresponding to the device face), was transferred to the PS side thanks to metallic brushes included in the wafer holder periphery (Figure 3). Then, the impact of PSi backing on the transducer frequency response was evaluated and it was found that a drastic reduction of the cutoff amplitude and a shift of its frequency to higher values can be obtained (15). To go further, the impact of the porous silicon layer morphology on the substrate resonance is currently investigated to optimize the backing efficiency.…”

Section: Psi Backing For Capacitive Micromachined Ultrasonic Transducersmentioning

confidence: 99%

(Invited) Recent Advances in Porous Silicon Based Microelectronic Devices

Gautier¹,

Billoue²,

Defforge³

et al. 2018

ECS Trans.

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In this paper, we show some recent advances that have been performed in the field of Porous Silicon (PSi) applied to microelectronic devices. Indeed, many components can implement the specific properties of this nanostructured material. Therefore, it has been identified as a serious candidate for the integration of complex functions in a single silicon wafer in a "more than Moore" context. In particular, it will be shown that PSi etching is nowadays mastered at a wafer scale on localized areas, 3D surfaces or on the backside of devices. Some typical examples of applications such as RF devices, AC power switches or ultrasonic transducers will be described in order to illustrate the benefits PSi technology can provide.

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Section: Psi Backing For Capacitive Micromachined Ultrasonic Transducersmentioning

confidence: 99%