A vapor-phase deposition approach to the silanization modification of the oxidized porous silicon ͑PSi͒ surface using ͑CH 3 O͒ 3 Si͑CH 2 ͒ 3 NH 2 has been exploited. Standard clean ͑SC͒-1 ͑NH 3 H 2 O / H 2 O 2 / H 2 O, 1:1:5,v/ v͒ and SC-2 ͓HCl/ H 2 O 2 / H 2 O ͑1:1:6,v/ v͔͒ solutions are utilized for the first time to obtain oxidized PSi and have been proved to be a very efficient combination for creating Si-OH species on the PSi surface. After the modification, an amine group terminated surface was successfully created as demonstrated by the contact angle with water, the x-ray photoelectron spectroscopy, and the Fourier transform infrared ͑FTIR͒ spectra. The influences of the surface derivatives on the composition stability of the PSi layer and on its photoluminescence properties were investigated by means of FTIR spectra, photoluminescence spectra, and time-resolved photoluminescence measurements.