Position and number control of self-assembled InAs quantum dots by selective area metalorganic vapor-phase epitaxy

Hahn, Cheol-Koo; Motohisa, Junichi; Fukui, Takashi

doi:10.1016/s0022-0248(00)00785-5

Cited by 8 publications

(1 citation statement)

References 19 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Since the 1980s various techniques have been developed to prepare III-V semiconductor quantum dots (QDs) which are able to provide three-dimensional (3D) carrier confinement [1][2][3][4][5][6][7][8][9][10][11][12][13][14]. High-quality QDs have been achieved by bottom-up methods, especially the Stranski-Krastanow (S-K) [15] epitaxial growth technology.…”

Section: Introductionmentioning

confidence: 99%

Nano-fabrication and related optical properties of InGaN/GaN nanopillars

Hao

Wang

et al. 2015

Nanotechnology

View full text Add to dashboard Cite

Nanopillars with diameters down to 20 nm were fabricated from InGaN/GaN multiple quantum wells (MQWs) by using a nanosphere-SiO2 double mask and inductively coupled plasma (ICP) etching. Clear photoluminescence (PL) signals of the nanopillars were observed at room temperature, and the PL peak energy at 20 K showed a large blueshift of 220 meV compared with that of the original MQWs. The exciton activation energy in the temperature range of 100 ∼ 300 K increased from 33 meV for MQWs to 83 meV for nanopillars. According to the measurements and numerical simulation results, the strain relaxation effect is believed to play a dominant role rather than the quantum confinement effect in determining the emission wavelength of nanopillars. This work also demonstrates a promising method for obtaining III-nitride quantum dots.

show abstract