Position-Controlled III–V Compound Semiconductor Nanowire Solar Cells by Selective-Area Metal–Organic Vapor Phase Epitaxy

Fukui, Takashi; Yoshimura, Masashi; Nakai, Eiji; Tomioka, Katsuhiro

doi:10.1007/s13280-012-0266-5

Cited by 39 publications

(28 citation statements)

References 20 publications

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“…III-V semiconductor nanowire array based solar cells have been demonstrated using GaAs (21,(146)(147)(148)(149)(150)(151)(152)(153)(154)(155)(156), InP (22,(157)(158)(159)(160)(161), GaN/InGaN (162)(163)(164)(165), InN (166), InAs (167), InGaAs (168), GaAsP (169,170) and GaAs/InGaP (152, 171) material systems. As discussed earlier, GaAs and InP have bandgaps ideal for maximising the photovoltaic conversion efficiencies in single junction solar cells.…”

Section: Materials Used For Solar Cellsmentioning

confidence: 99%

III‐VCompound Semiconductor Optoelectronic Devices

Mokkapati

Jagadish

2014

Wiley Encyclopedia of Electrical and Electronics Engineering

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Section: Materials Used For Solar Cellsmentioning

confidence: 99%

III‐VCompound Semiconductor Optoelectronic Devices

Mokkapati

Jagadish

2014

Wiley Encyclopedia of Electrical and Electronics Engineering

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“…A distinct property in selective-area growth is the formation of a core-multishell structure allowing passivation and band-engineering of high-electron mobility transistor (HEMT) structures. The use of radial growth modes in selective-area growth has enabled the formation of functional heterostructures on NW-sidewalls such as LEDs [69], solar cells [70][71][72][73], and HEMTs [22,27]. Figure 10(a) illustrates a core-multishell NW-HEMT structure using InP/InAlAs/δ-doped layer/InAlAs/InGaAs multi-shell layers as a modulation doped structure.…”

Section: High Performance Vertical Ingaas Nw-sgts On Simentioning

confidence: 99%

(Invited) Vertical III-V Nanowire-Channel on Si

Tomioka

Fukui

2013

ECS Trans.

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We report on the recent achievement of III-V nanowire applications for a vertical FET and steep subthreshold-slope transistors on Si. III-V nanowires (NWs) were heterogeneously integrated on Si by selective-area metal-organic vapor-phase epitaxy with precise positioning on Si (111) surfaces. Nanometerscale growth enabled the integration of III-V NWs on Si regardless of apparent lattice mismatches. A non-planar vertical transistor architecture, which is a vertical surrounding-gate structure, was demonstrated on Si substrate. This demonstration should have broad applications for use in high-electron mobility transistors and tunnel FETs with functionality that is not possible with conventional Si-CMOS technologies.

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“…Since the demonstration of the first pn ‐junction behavior in GaAs NWs in 1991, rapid progress has been made in doping of NWs. Axial and radial pn ‐junctions in group IV and III‐V NWs as well as modulation doping in Si NWs have been reported. Despite much progress, the mechanisms behind doping processes in NWs are not understood, and controlled doping is still a challenge in the NW field compared to thin films, in part due to geometrical related challenges of reliable evaluation of doping levels in NWs.…”

Section: Introductionmentioning

confidence: 99%

Doping GaP Core–Shell Nanowire pn‐Junctions: A Study by Off‐Axis Electron Holography

Yazdi

Berg

Borgström

et al. 2015

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The doping process in GaP core-shell nanowire pn-junctions using different precursors is evaluated by mapping the nanowires' electrostatic potential distribution by means of off-axis electron holography. Three precursors, triethyltin (TESn), ditertiarybutylselenide, and silane are investigated for n-type doping of nanowire shells; among them, TESn is shown to be the most efficient precursor. Off-axis electron holography reveals higher electrostatic potentials in the regions of nanowire cores grown by the vapor-liquid-solid (VLS) mechanism (axial growth) than the regions grown parasitically by the vapor-solid (VS) mechanism (radial growth), attributed to different incorporation efficiency between VLS and VS of unintentional p-type carbon doping originating from the trimethylgallium precursor. This study shows that off-axis electron holography of doped nanowires is unique in terms of the ability to map the electrostatic potential and thereby the active dopant distribution with high spatial resolution.

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Position-Controlled III–V Compound Semiconductor Nanowire Solar Cells by Selective-Area Metal–Organic Vapor Phase Epitaxy

Cited by 39 publications

References 20 publications

III‐VCompound Semiconductor Optoelectronic Devices

III‐VCompound Semiconductor Optoelectronic Devices

(Invited) Vertical III-V Nanowire-Channel on Si

Doping GaP Core–Shell Nanowire pn‐Junctions: A Study by Off‐Axis Electron Holography

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