Positive Gate-Bias Temperature Stability of RF-Sputtered $\hbox{Mg}_{0.05}\hbox{Zn}_{0.95}\hbox{O}$ Active-Layer Thin-Film Transistors

O2 /HMDSO-Plasma-Deposited Organic-Inorganic Hybrid Film for Gate Dielectric of MgZnO Thin-Film Transistor

“…TFTs with a poor interface usually have high V t and SS, indicating that they are difficult to switch on. The interfacial trap state density N t is positively correlated to SS . In Figure (a), SS remains small when the SiOSi/SiCH 3 FTIR absorption ratio is below ∼1.7, indicating that a more organic‐like gate dielectric provides a better interface with the Mg 0.05 Zn 0.95 O channel material of the TFTs.…”

“…A‐Si:H TFTs with this hybrid gate dielectric were ultra‐flexible; the TFTs remained functioning under 5% bending tensile strain and 2.5% bending compressive strain . In this study, we used hybrid films as the gate dielectrics for rf‐sputtered MgZnO TFTs, in which Mg was incorporated in ZnO to improve the device stability . The inorganic/organic component ratio in the hybrid film was tailored by varying the process power and O 2 /HMDSO flow ratio, denoted by O 2 /HMDSO.…”

Compositional tuning of atomic layer deposited MgZnO for thin film transistors

“…As an alternative, RF-sputtered magnesium zinc oxide (MgZnO) has been explored as a TFT material. 2 The benefits of adding Mg to ZnO are cited as a larger band gap (7.7 eV for MgO and 3.28 eV for ZnO) and lower oxygen-related defect concentrations because of the higher oxygen-affinity of magnesium. This view is substantiated by Ku et al, 3 who have used metal-organic chemical vapour deposition to deposit Mg 0.06 Zn 0.94 O as an active layer in TFTs with superior thermal stability compared to pure ZnO devices.…”

Negative gate-bias instability of ZnO thin-film transistors studied by current–voltage and capacitance–voltage analyses

“…8,9 Moreover, several mechanisms have been proposed to explain the bias-induced instability, such as charge trapping or defect-state creation in the gate dielectric or at the gate dielectric/channel interface. However, since these mechanisms were developed only from the output and transfer characteristics of ZnO-based TFTs, 10,11 there are not enough experimental results to support these deductions. In this work, the electrical instabilities of radio-frequency (RF)sputtered ZnO TFT are investigated under negative gate-bias stress.…”