Semiconductor Lithography 1988
DOI: 10.1007/978-1-4613-0885-0_3
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Positive Radiation Resists

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Cited by 2 publications
(3 citation statements)
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References 183 publications
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“…The big sensitivity difference between the two resists is expected because EPR is a chemically amplified resist. 9 This difference is also in good agreement with results at shorter wavelength x rays reported for related EPR 10 and PMMA 7,8 formulations and with unpublished results with ArF and F 2 lasers together with quadrapole mass spectrometry studies.…”
Section: ϫ2supporting
confidence: 91%
See 1 more Smart Citation
“…The big sensitivity difference between the two resists is expected because EPR is a chemically amplified resist. 9 This difference is also in good agreement with results at shorter wavelength x rays reported for related EPR 10 and PMMA 7,8 formulations and with unpublished results with ArF and F 2 lasers together with quadrapole mass spectrometry studies.…”
Section: ϫ2supporting
confidence: 91%
“…Up to now, the only known photoresist used successfully in SXCM has been polymethyl methacrylate ͑PMMA͒. [6][7][8] This is a high resolution photoresist when exposed to e-beam or x-ray radiation, with contrast suitable for grayscale recording; nevertheless, it is a relatively slow photoresist ͑Ralph Feder and co-workers at IBM also used a copolymer of PMMA with MMA with about a twofold increase in sensitivity 7 ͒ and, therefore, requires a very large fluence of x rays for imaging. This fact has limited the range of x-ray sources that can be used mainly to those of large national facilities.…”
mentioning
confidence: 99%
“…The emergence of soft lithographic techniques that are not destructive to the supramolecular DNA organization will significantly broaden the range of their nanotechnological applications. Radiation lithography [92] is the most widespread and reliable patterning method.…”
Section: Peptidesmentioning
confidence: 99%