Positron-annihilation studies of neutral and negatively charged As vacancies in GaAs

Ambigapathy, R.; Manuel, Α. A.; Hautojärvi, P.; Saarinen, K.; Corbel, C.

doi:10.1103/physrevb.50.2188

Cited by 50 publications

(28 citation statements)

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“…As in defect spectroscopy it is often necessary to perform large series of measurements, e.g., as a function of temperature or detection depth, and Doppler broadening spectroscopy has been the method of choice. ACAR and 2D-ACAR have been used in defect studies much less (Saito, Oshiyama, and Tanigawa, 1991;Ambigapathy et al, 1994). The typical resolution of a HPGe detector is around 1-1.5 keV at 511 keV.…”

Section: Methodsmentioning

confidence: 99%

Defect identification in semiconductors with positron annihilation: Experiment and theory

2013

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Positron annihilation spectroscopy is particularly suitable for studying vacancy-type defects in semiconductors. Combining state-of-the-art experimental and theoretical methods allows for detailed identification of the defects and their chemical surroundings. Also charge states and defect levels in the band gap are accessible. In this review the main experimental and theoretical analysis techniques are described. The usage of these methods is illustrated through examples in technologically important elemental and compound semiconductors. Future challenges include the analysis of noncrystalline materials and of transient defect-related phenomena.

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Section: Methodsmentioning

confidence: 99%

Defect identification in semiconductors with positron annihilation: Experiment and theory

2013

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“…2,3 At present, the positron annihilation is successfully applied to investigate the structure of the native defects in compound III-V semiconductors. [4][5][6] However, few works have been reported in InP, which have attracted much attention because it is one of the most promising materials for the development of optoelectronics.…”

Section: Introductionmentioning

confidence: 99%

Positron lifetime measurements on neutron-irradiated InP crystals

Navarro

Damonte

Marı́

et al. 1996

Journal of Applied Physics

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Neutron-irradiated InP single crystals have been investigated by positron-lifetime measurements. The samples were irradiated with thermal neutrons at different fluences yielding concentrations for Sn-transmuted atoms between 2ϫ10 15 and 2ϫ10 18 cm Ϫ3 . The lifetime spectra have been analyzed into one exponential decay component. The mean lifetimes show a monotonous increase with the irradiation dose from 246 to 282 ps. The increase in the lifetime has been associated to a defect containing an Indium vacancy. Thermal annealing at 550°C reduces the lifetime until values closed to those obtained for the as-grown and conventionally doped InP crystals.

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“…17,18 The parameters for neutral As vacancies have been estimated to be S V,As /S B ϭ1.030 and W V,As /W B ϭ0.80. 19 The (S, W) points of GaAsN layers appear between the values of GaAs a͒ Electronic mail: juha.toivonen@hut.fi lattice and Ga vacancy, which allows us to identify the defects as Ga vacancies. In fact, As vacancies are not typically seen by positron annihilation spectroscopy in p-type and semi-insulating GaAs, because of their positive charge.…”

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confidence: 99%

Observation of defect complexes containing Ga vacancies in GaAsN

Toivonen

Hakkarainen

Sopanen

et al. 2003

Applied Physics Letters

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Positron annihilation spectroscopy was used to study GaAsN/GaAs epilayers. GaAsN layers were found to contain Ga vacancies in defect complexes. The density of the vacancy complexes increases rapidly to the order of 10 18 cm Ϫ3 with increasing N composition and decreases after annealing at 700°C. The anticorrelation of the vacancy concentration and the integrated photoluminescence intensity suggests that the Ga vacancy complexes act as nonradiative recombination centers.

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Positron-annihilation studies of neutral and negatively charged As vacancies in GaAs

Cited by 50 publications

References 13 publications

Defect identification in semiconductors with positron annihilation: Experiment and theory

Defect identification in semiconductors with positron annihilation: Experiment and theory

Positron lifetime measurements on neutron-irradiated InP crystals

Observation of defect complexes containing Ga vacancies in GaAsN

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