Neutron-irradiated InP single crystals have been investigated by positron-lifetime measurements. The samples were irradiated with thermal neutrons at different fluences yielding concentrations for Sn-transmuted atoms between 2ϫ10 15 and 2ϫ10 18 cm Ϫ3 . The lifetime spectra have been analyzed into one exponential decay component. The mean lifetimes show a monotonous increase with the irradiation dose from 246 to 282 ps. The increase in the lifetime has been associated to a defect containing an Indium vacancy. Thermal annealing at 550°C reduces the lifetime until values closed to those obtained for the as-grown and conventionally doped InP crystals.

No abstract

No abstract

No abstract