Radiation damage in neutron transmutation doped-InP

Marı́, B.; Navarro, Francisco Javier Navarro; Hernández, Miguel; Riera, Jaime

doi:10.1016/s0168-583x(96)00517-4

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“…The presence of this second long-living component of 300 ps is well known and has been related to vacancies created in the In sublattice by the transmutation process. 13 This experimental result agrees with theoretical works on positron capture in In monovacancyrelated defects in this material, previously reported by Puska et al 14 However, when a high amount of iron of about 10 17 cm Ϫ3 is introduced into the InP matrix, we find important changes in the evolution of the lifetime parameters that do not conform with the monovacancy nature of the new centers created by irradiation:…”

Section: Discussionsupporting

confidence: 91%

Observation of Fe-related defects in neutron irradiated semi-insulating InP

Marı́

Hernández-Fenollosa

Navarro

2001

Journal of Applied Physics

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Articles you may be interested inComplementary infrared and transmission electron microscopy studies of the effect of high temperature-high pressure treatments on oxygen-related defects in irradiated silicon Effects of annealing on the electrical properties of Fe-doped InP J. Appl. Phys. 86, 981 (1999); 10.1063/1.370835 Photoluminescence study of the defects induced by neutron irradiation and rapid annealing in semi-insulating GaAsOptical absorption and positron lifetime measurements have been performed on Fe-doped semi-insulating InP single crystals irradiated with thermal neutrons in a wide dose range from 0.1 to 2.7ϫ10 17 n cm Ϫ2 . Two lifetimes were found: 1 ϭ210 ps is constant in all the irradiation range; and 2 ϭ340 ps reaches an intensity of almost 40% at the higher fluence used. When comparing these results with those obtained on unintentionally doped InP, a large increase of the longest lifetime is observed, from 300 ps in the nondoped InP to 340 ps in the semi-insulating InP. The increase of the second lifetime in InP:Fe means that the positron traps are less attractive to positrons. These positron traps have been associated to a complex defect generated by the main neutron-originated defect, the indium vacancy, and the clusters or interstitial atoms of Fe. The optical absorption spectra show a background absorption related to Fe precipitates in as-grown InP:Fe. This background absorption disappears after neutron irradiation, suggesting the destruction of Fe precipitates by the energetic particles generated in the transmutation process of 115 In.

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Section: Discussionsupporting

confidence: 91%