Articles you may be interested inComplementary infrared and transmission electron microscopy studies of the effect of high temperature-high pressure treatments on oxygen-related defects in irradiated silicon Effects of annealing on the electrical properties of Fe-doped InP J. Appl. Phys. 86, 981 (1999); 10.1063/1.370835
Photoluminescence study of the defects induced by neutron irradiation and rapid annealing in semi-insulating GaAsOptical absorption and positron lifetime measurements have been performed on Fe-doped semi-insulating InP single crystals irradiated with thermal neutrons in a wide dose range from 0.1 to 2.7ϫ10 17 n cm Ϫ2 . Two lifetimes were found: 1 ϭ210 ps is constant in all the irradiation range; and 2 ϭ340 ps reaches an intensity of almost 40% at the higher fluence used. When comparing these results with those obtained on unintentionally doped InP, a large increase of the longest lifetime is observed, from 300 ps in the nondoped InP to 340 ps in the semi-insulating InP. The increase of the second lifetime in InP:Fe means that the positron traps are less attractive to positrons. These positron traps have been associated to a complex defect generated by the main neutron-originated defect, the indium vacancy, and the clusters or interstitial atoms of Fe. The optical absorption spectra show a background absorption related to Fe precipitates in as-grown InP:Fe. This background absorption disappears after neutron irradiation, suggesting the destruction of Fe precipitates by the energetic particles generated in the transmutation process of 115 In.