Post-implantation annealing of SiC studied by slow-positron spectroscopies

Bräuer, G.; Anwand, W.; Coleman, Peter J.; Stormer, John C.; Plazaola, F.; Campillo, J M; Pacaud, Y.; Skorupa, W.

doi:10.1088/0953-8984/10/5/022

Cited by 35 publications

(23 citation statements)

References 25 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The results obtained are similar to those reported earlier for 3C-and 6H-SiC. 10 Our calculations give for the positron lifetime in bulk SiC a value of b = 143.7 ps, in agreement with the measured value b = 149.6 ps. When using the theoretical calculations to determine the measured cluster sizes, we compare the differences between the bulk and defect lifetimes.…”

Section: Vacancy Clusterssupporting

confidence: 91%

See 1 more Smart Citation

Clustering of vacancy defects in high-purity semi-insulating SiC

et al. 2007

View full text Add to dashboard Cite

Positron lifetime spectroscopy was used to study native vacancy defects in semi-insulating silicon carbide. The material is shown to contain ͑i͒ vacancy clusters consisting of four to five missing atoms and ͑ii͒ Sivacancy-related negatively charged defects. The total open volume bound to the clusters anticorrelates with the electrical resistivity in both as-grown and annealed materials. Our results suggest that Si-vacancy-related complexes electrically compensate the as-grown material, but migrate to increase the size of the clusters during annealing, leading to loss of resistivity.

show abstract

Section: Vacancy Clusterssupporting

confidence: 91%

“…[8][9][10][11][12][13][14][15][16][17][18][19][20][21][22][23][24] ͒. These studies often involve irradiated materials.…”

Section: Introductionmentioning

confidence: 99%

Clustering of vacancy defects in high-purity semi-insulating SiC

et al. 2007

View full text Add to dashboard Cite

show abstract

“…Vacancy clusters are estimated to be formed by 4-5 V Zn -V O missing pairs by comparing to lifetime ratios in SiC, where they were thoroughly studied. 22,23 Vacancy clusters with a lifetime of 340 ps have been previously observed in bulk ZnO samples. 24 Its intensity remains approximately constant in both ZnCdO films (E $ 5-15 keV) around 40%-60%.…”

Section: Lifetime Pasmentioning

confidence: 71%

On the interplay of point defects and Cd in non-polar ZnCdO films

Zubiaga

Reurings

Tuomisto

et al. 2013

Journal of Applied Physics

View full text Add to dashboard Cite

Thermal evolution of defects in undoped zinc oxide grown by pulsed laser deposition J. Appl. Phys. 116, 033508 (2014) , respectively, have been measured inside the films. Secondary ion mass spectroscopy results show that most Cd stays inside the ZnCdO film but the diffused atoms can penetrate up to 1.3 lm inside the ZnO buffer. PAS results give an insight to the structure of the meta-stable ZnCdO above the thermodynamical solubility limit of 2%. A correlation between the concentration of vacancy clusters and Cd has been measured. The concentration of Zn vacancies is one order of magnitude larger than in as-grown non-polar ZnO films and the vacancy cluster are, at least partly, created by the aggregation of smaller Zn vacancy related defects. The Zn vacancy related defects and the vacancy clusters accumulate around the Cd atoms as a way to release the strain induced by the substitutional Cd Zn in the ZnO crystal.

show abstract

“…We first examined the crystallinity of the samples after implantation. Figure S2 According to our previous positron annihilation experiments [25,26,28,42,43], divacancies have been identified in neutron or ion irradiated SiC. They also dominate defects after annealing [43].…”

Section: Resultsmentioning

confidence: 68%

“…Figure S2 According to our previous positron annihilation experiments [25,26,28,42,43], divacancies have been identified in neutron or ion irradiated SiC. They also dominate defects after annealing [43]. divacancies based on estimation according to a scaling curve for defects in 6H-SiC [44].…”

Section: Resultsmentioning

confidence: 83%