Potential applications of focused ion beam technology for the semiconductor industry

High Resolution Focused Ion Beams: FIB and its Applications

“…Reuss et al [Reuss, 1985] investigated the differences between conventionally and FIB produced NPN transistors, and found essentially no differences. Analysis of the implant profiles by SIMS showed no significant differences, as shown in Figure 6.51, and a further study using RBS and Auger microscopy also showed no significant differences.…”

“…In an effort to produce Si bipolar transistors by implanting both B and As by FIB, Reuss et al [Reuss, 1985 ]performed both conventional and FIB implants on the same wafer, and found that the results for both techniques were about the same as measured by device characteristics. The bipolar transistor structure is shown in Figure 6 to find the alignment marks for a transistor, and then to perform the implants in the base and emitter regions.…”

Focused Ion Beam Processing for 3D Chiral Photonics Nanostructures

“…Compared to other nanofabrication techniques, focused ion/electron beam technology stands out for many reasons, such as its enormous flexibility in 3D design, but also because it requires only a single technological step, is compatible with many materials, and requires little preparation time [ 18 ]. Focused ion beam (FIB) technology found its first applications in the semiconductor industry [ 19 ], in the repair of defects in lithography photomasks [ 20 , 21 ], in circuit modifications [ 22 ], in transmission electron microscope (TEM) sample preparation [ 23 , 24 ], and in failure analyses [ 25 ]. Subsequently, FIB processing has been used for the fabrication of tools for atomic force microscopy (AFM) [ 26 ] and scanning optical near-field (SNOM) microscopy [ 27 ].…”