Potential fluctuations in compensated chalcopyrites

Siebentritt, Susanne; Papathanasiou, N.; Lux‐Steiner, Martha Ch.

doi:10.1016/j.physb.2005.12.208

Cited by 50 publications

(42 citation statements)

References 13 publications

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“…͑ii͒ All spectra are considerably broader than one would expect from a direct semiconductor. We propose that for low temperatures this broadening is a result of a DAP transition, broadened due to potential fluctuations, [25][26][27][28] whereas at higher temperatures the broadening of a BB transition is due to lateral band gap fluctuations 16,[20][21][22][23][24][25][26][27][28][29] …”

Section: A Resultsmentioning

confidence: 99%

Electroluminescence analysis of high efficiency Cu(In,Ga)Se2 solar cells

Kirchartz

Rau

2007

Journal of Applied Physics

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We compare the electroluminescence (EL) of polycrystalline ZnO∕CdS∕Cu(In,Ga)Se2 heterojunction solar cells with similar band gaps but different open circuit voltages, indicating a difference in the electronic quality of the absorber. Temperature dependent EL measurements reveal that all cells feature transitions from donor-acceptor pair recombination at lower temperature to band to band recombination at higher temperatures. However, the less efficient cells show a longer transition range with donor-acceptor pair recombination still apparent at room temperature. We find further that the part of the room temperature spectrum that is due to band to band transitions in the respective cells is relatively broader than expected from a direct semiconductor with a homogeneous band gap. We analyze this spectral broadening by a model that accounts for band gap fluctuations of the absorber material. The experimental results show that the dominant part of this spectral broadening results from the intentional band gap grading and not from stochastic band gap fluctuations. We show further that the spectral EL emission is linked to the photovoltaic external quantum efficiency by electro-optical reciprocity. In a similar way, the external EL quantum efficiency is related to the open circuit voltage of the device. We verify experimentally that the difference between radiative and measured open circuit voltage determines the EL external quantum efficiency of the solar cell. The best Cu(In,Ga)Se2 solar cell reaches an external light emitting diode quantum efficiency of around 0.1%.

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Section: A Resultsmentioning

confidence: 99%

Electroluminescence analysis of high efficiency Cu(In,Ga)Se2 solar cells

Kirchartz

Rau

2007

Journal of Applied Physics

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“…The exponential fitting curve indicates that EL emission is tail-like emission [14], meaning that the band-gap of CIGS layer is 1.14 eV. Fig.2c illustrates the ratio of EL intensity for 300 o C RTA to as-deposited samples, represented by EL(300)/EL(0).…”

Section: Resultsmentioning

confidence: 99%

Analysis of recombination path for Cu(In,Ga)Se2 solar cells through luminescence

Yang

Chen

et al. 2015

Materials Letters

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“…Hence it is expected to exhibit a high concentration of copper vacancies, providing the p-type conductivity of the material. It has been shown previously that Cu-poor CIGS is highly compensated [11,12], having comparable and high density of donors and acceptors [13]. Most of the defects are charged without generating free carriers.…”

Section: Excitation Wavelength Dependencementioning

confidence: 91%

“…The shift to lower energy with increasing temperature cannot be explained by the decrease of the band gap alone. Moreover, it has been reported that the band gap of chalcopyrites is essentially constant below 100 K [12]. The redshift is yet another indication of potential fluctuations in compensated material [11,13].…”

Section: Temperature Dependencementioning

confidence: 94%

Influence of an Sb doping layer in CIGS thin-film solar cells: a photoluminescence study

Puyvelde

Lauwaert

Pianezzi

et al. 2013

J. Phys. D: Appl. Phys.

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Sb doping of Cu(In,Ga)Se 2 (CIGS) solar cells has been reported to exhibit a positive effect on the morphology of the absorber layer, offering a possibility to lower manufacturing cost by lowering the annealing temperatures during the CIGS deposition. In this work electron microscopy, energy-dispersive X-ray spectroscopy and photoluminescence experiments have been performed on cells deposited on soda lime glass substrates, adding a thin Sb layer onto the Mo back contact prior to the CIGS absorber deposition. The defect structure of CIGS solar cells doped with Sb in this way has been investigated and is compared with that of undoped reference cells. The influence of substrate temperature during absorber growth has also been evaluated. For all samples the photoluminescence results can be explained by considering three donor-acceptor pair recombination processes involving the same defect pairs.

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Potential fluctuations in compensated chalcopyrites

Cited by 50 publications

References 13 publications

Electroluminescence analysis of high efficiency Cu(In,Ga)Se2 solar cells

Electroluminescence analysis of high efficiency Cu(In,Ga)Se2 solar cells

Analysis of recombination path for Cu(In,Ga)Se2 solar cells through luminescence

Influence of an Sb doping layer in CIGS thin-film solar cells: a photoluminescence study

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