“…Electrical properties of Cu 2 O, such as carrier mobility, carrier concentration, and resistivity are very dependent on preparation methods. Cuprous oxide thin films have been prepared by various techniques like thermal oxidation (Jayatissa et al, 2009;Musa et al, 1998;Sears & Fortin, 1984), chemical vapor deposition (Kobayashi et al 2007;Maruyama, 1998;Medina-Valtierra et al, 2002;Ottosson et al, 1995;Ottosson & Carlsson, 1996), anodic oxidation (Fortin & Masson, 1982;Sears and Fortin, 1984;Singh et al, 2008), reactive sputtering (Ghosh et al, 2000), electrodeposition (Briskman, 1992;Daltin et al, 2005;Georgieva & Ristov, 2002;Golden et al, 1996;Liu et al, 2005;Mizuno et al, 2005;Santra et al, 1999;Siripala et al, 1996;Tang et al, 2005;Wang et al, 2007;Wijesundera et al, 2006), plasma evaporation (Santra et al, 1992), sol-gel-like dip technique (Armelao et al, 2003;Ray, 2001) etc. Each of these methods has its own advantages and disadvantages.…”