Power Conversion Efficiency Enhancement of Low-Bandgap Mixed Pb–Sn Perovskite Solar Cells by Improved Interfacial Charge Transfer

Jiang, Tingming; Chen, Zeng; Xu, Chunxiang; Chen, Xinya; Xu, Xuehui; Li, Tianyu; Bai, Lizhong; Yang, Dexin; Di, Dawei; Sha, Wei E. I.; Zhu, Haiming; Yang, Yang Michael

doi:10.1021/acsenergylett.9b00880

Cited by 87 publications

(70 citation statements)

References 37 publications

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“…[ 52 ] Due to the reduced trap density resulted in larger carrier mobility, which further resulted in quicker charge extraction for TMC sample in the Figure S10a, Supporting Information. [ 52–54 ] In the meanwhile, from the transient photovoltage (TPV) in the Figure S10b, Supporting Information, the charge recombination lifetime obtained to be 58 µs shows slower interfacial charge recombination, [ 20,53 ] which explains that faster carrier extraction prevents charge accumulation at the perovskite‐charge extraction layer interface. [ 20,52,53 ] This result is consistent with SCLC.…”

Section: Figurementioning

confidence: 99%

“…[ 52–54 ] In the meanwhile, from the transient photovoltage (TPV) in the Figure S10b, Supporting Information, the charge recombination lifetime obtained to be 58 µs shows slower interfacial charge recombination, [ 20,53 ] which explains that faster carrier extraction prevents charge accumulation at the perovskite‐charge extraction layer interface. [ 20,52,53 ] This result is consistent with SCLC. In summary, we demonstrated MAPbI 3 monocrystals with tunable thickness via two substrates confined AVC method.…”

Section: Figurementioning

confidence: 99%

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Ultrathin Perovskite Monocrystals Boost the Solar Cell Performance

Kong

Wang

et al. 2020

Advanced Energy Materials

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Grains and grain boundaries play key roles in determining halide perovskite‐based optoelectronic device performance. Halide perovskite monocrystalline solids with large grains, smaller grain boundaries, and uniform surface morphology improve charge transfer and collection, suppress recombination loss, and thus are highly favorable for developing efficient solar cells. To date, strategies of synthesizing high‐quality thin monocrystals (TMCs) for solar cell applications are still limited. Here, by combining the antisolvent vapor‐assisted crystallization and space‐confinement strategies, high‐quality millimeter sized TMCs of methylammonium lead iodide (MAPbI3) perovskites with controlled thickness from tens of nanometers to several micrometers have been fabricated. The solar cells based on these MAPbI3 TMCs show power conversion efficiency (PCE) of 20.1% which is significantly improved compared to their polycrystalline counterparts (PCE) of 17.3%. The MAPbI3 TMCs show large grain size, uniform surface morphology, high hole mobility (up to 142 cm2 V−1 s−1), as well as low trap (defect) densities. These properties suggest that TMCs can effectively suppress the radiative and nonradiative recombination loss, thus provide a promising way for maximizing the efficiency of perovskite solar cells.

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Section: Figurementioning

confidence: 99%

Section: Figurementioning

confidence: 99%

Ultrathin Perovskite Monocrystals Boost the Solar Cell Performance

Kong

Wang

et al. 2020

Advanced Energy Materials

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“…Many efforts have been devoted to improving the PCE of low‐bandgap mixed Pb–Sn PSCs . However, it often exhibits a larger open‐circuit voltage ( V oc ) loss, and therefore, its efficiency is far behind that of pure Pb‐based PSCs with a medium bandgap.…”

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confidence: 99%

“…A modified detailed balance model is used to simulate the experimental J – V curves to understand the PCE loss mechanism of our low‐bandgap mixed Pb–Sn PSCs. The simulated J – V curves can provide three primary parameters including the nonradiative recombination rate γ , the series resistance R s , and the shunt resistance R sh .…”

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confidence: 99%

Realizing High Efficiency over 20% of Low‐Bandgap Pb–Sn‐Alloyed Perovskite Solar Cells by In Situ Reduction of Sn⁴⁺

Jiang

Chen

et al. 2019

Solar RRL

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Although the theoretical power conversion efficiency (PCE) of low‐bandgap Pb–Sn‐alloyed perovskite solar cells (PSCs) is higher than that of its conventional pure Pb counterpart, its device performance currently has been severely restricted by the large open‐circuit voltage (Voc) loss. Herein, it is discovered that the Sn4+‐induced trap states of the perovskite film can be effectively suppressed by introducing excess Sn powder into the precursor solution (FASnI3) to reduce the Sn4+ content. As a result, the average charge carrier lifetime of the perovskite film increases remarkably from 115 to 701 ns due to the suppressed nonradiative recombination, and the energy levels have up‐shifted by about 0.27 eV, rendering a more favorable energy‐level alignment at the interface. Ultimately, the champion PSCs using a low‐bandgap (FASnI3)0.6(MAPbI3)0.4 perovskite film with Sn4+ reduction show a high Voc of 0.843 V corresponding to a Voc loss as low as 0.397 eV and a high fill factor of 80.34%, leading to an impressive PCE of 20.7%, which is one of the few instances of a PCE over 20% for low‐bandgap mixed Pb–Sn PSCs to date.

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“…Our perovskite photodetector performance can be enhanced by improving the uniformity and crystallinity of the perovskite layer. For example, methods like precursor engineering, Rubidium doping,13a GuaSCN passivation, and delayed annealing have been reported to effectively improve perovskite films crystallization and reduce native defects. Interface heterostructure with wide bandgap perovskite is also worth to be applied at the perovskite/P3HT interface .…”

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confidence: 99%

Spin‐On‐Patterning of Sn–Pb Perovskite Photodiodes on IGZO Transistor Arrays for Fast Active‐Matrix Near‐Infrared Imaging

Chen

Zou

et al. 2019

Adv Materials Technologies

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features for developing high-performance X-ray imagers and ultraviolet sensors. [3] For imaging application, IGZO TFTs were mainly integrated with amorphous silicon and organic photodiodes, [3c,e,4] the spectral of which were usually limited to visible light detection. Large-area, active-matrix infrared sensing, therefore, remains a challenge.Organic-inorganic hybrid perovskites possess excellent optoelectronic properties with high absorption coefficient, high charge carrier mobility, long carrier diffusion lengths, and tunable bandgaps, [5] rendering it a promising material for across-the-board optoelectronic devices, [6] including photovoltaic cells, [7] light-emitting, lasing devices, [8] and high-performance photodetectors. [9] In particular, compared with predominant photodetectors made of inorganic semiconductors, solution-processable perovskite is more promising for lowcost, flexible, and large-area scenarios. [6d] Conventional lead-based perovskite photodiodes (PDs) provide a detection spectral range from 300 to 800 nm. [10] To further extend the spectral response to the near-infrared (NIR) range, there are normally two approaches. One is to combine perovskite with narrow bandgap polymers or quantum dots such as PDPP3T [11] and PbS quantum dots. [12] Another approach is to introduce an Sn-Pb binary perovskite PDs. [13] The smaller ionic radii of Sn 2+ than Pb 2+ (Sn 2+ :1.35 Å and Pb 2+ : 1.49 Å) [14] reduces the bandgap of perovskites due to the bowing effect, [15] so that Sn-Pb hybrid perovskite has lower bandgap to extend the light absorption to ≈1000 nm. Recently Xiaobao et al. reported MA 0.5 FA 0.5 Pb 0.5 Sn 0.5 I 3 perovskite photodetector, exhibiting a detectivity of over 10 12 Jones ranging from 800 to 970 nm. [13c] Wang et al. fabricated mixed Sn-Pb perovskite photodetectors with a broadband response from 300 to 1000 nm, responsivity (R) of over 0.4 A W −1 , and detectivity (D*) of over 10 12 Jones in the near-infrared region. [13b] Encouraging improvements in the Sn-Pb based perovskite stability have also been reported very recently, such as using GuaSCN passivation to achieve 1 µs carrier lifetime with long-term stability. [16] The above development of low bandgap organic-inorganic perovskite materials has brought new opportunity for developing advanced flat-panel Flat-panel imagers have wide applications in industrial and medical inspections. Nonetheless, large area infrared imaging remains a challenge due to the fact that the state-of-the-art infrared sensors are usually based on silicon or germanium technologies, which are limited by the wafer size. Recent advances in low bandgap Sn-Pb perovskite photodiodes (PDs) and indium gallium zinc oxide (IGZO) thin-film transistors (TFTs) matrix backplane bring new opportunity for developing the large area near-infrared image sensor. As a proof of concept, a 12 × 12 pixels array with each pixel independently controlled by the gate voltage of a TFT are constructed. Arrays of Sn-Pb based perovskite PDs are spin deposited onto the IGZO TF...

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Power Conversion Efficiency Enhancement of Low-Bandgap Mixed Pb–Sn Perovskite Solar Cells by Improved Interfacial Charge Transfer

Cited by 87 publications

References 37 publications

Ultrathin Perovskite Monocrystals Boost the Solar Cell Performance

Ultrathin Perovskite Monocrystals Boost the Solar Cell Performance

Realizing High Efficiency over 20% of Low‐Bandgap Pb–Sn‐Alloyed Perovskite Solar Cells by In Situ Reduction of Sn⁴⁺

Spin‐On‐Patterning of Sn–Pb Perovskite Photodiodes on IGZO Transistor Arrays for Fast Active‐Matrix Near‐Infrared Imaging

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Power Conversion Efficiency Enhancement of Low-Bandgap Mixed Pb–Sn Perovskite Solar Cells by Improved Interfacial Charge Transfer

Cited by 87 publications

References 37 publications

Ultrathin Perovskite Monocrystals Boost the Solar Cell Performance

Ultrathin Perovskite Monocrystals Boost the Solar Cell Performance

Realizing High Efficiency over 20% of Low‐Bandgap Pb–Sn‐Alloyed Perovskite Solar Cells by In Situ Reduction of Sn4+

Spin‐On‐Patterning of Sn–Pb Perovskite Photodiodes on IGZO Transistor Arrays for Fast Active‐Matrix Near‐Infrared Imaging

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Realizing High Efficiency over 20% of Low‐Bandgap Pb–Sn‐Alloyed Perovskite Solar Cells by In Situ Reduction of Sn⁴⁺