Precipitation, aggregation, and diffusion in heavily arsenic-doped silicon

Nobili, D.; Solmi, S.; Parisini, A.; Derdour, M.; Armigliato, A.; Moro, L.

doi:10.1103/physrevb.49.2477

Cited by 87 publications

(42 citation statements)

References 23 publications

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“…For the case of group-V dopants, as dealt with in this article, increasing amounts of evidence indicate that formation of small impurity-vacancy complexes plays the strongest role, but the picture is complicated by the coexistence of precipitates within high concentration layers of Sb 4 or As. 5 Most work on complex formation has been done on As in Si. According to theory, As 3 V 6,7 and, in particular, As 4 V 6-8 clusters (V denoting a vacancy͒ are energetically favored over isolated As, and As 2 V has a positive, but low energy of formation.…”

Section: Introductionmentioning

confidence: 99%

Si self-interstitial injection from Sb complex formation in Si

Fage-Pedersen

Гайдук

Hansen

et al. 2000

Journal of Applied Physics

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It has recently been established that Si self-interstitials are generated during annealing of high-concentration Sb layers in Si. In the present work, we make use of samples grown with molecular-beam epitaxy. We monitor, at different times and temperatures, the diffusion enhancement or retardation of deep B or Sb marker layers next to a 1.1×1020 cm−3 Sb box, as well as the formation of Sb precipitates within the box. It is concluded that the interstitials are not associated with precipitate growth, but that they are generated from formation of Sb-vacancy complexes, primarily involving 2 Sb atoms.

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Section: Introductionmentioning

confidence: 99%

Si self-interstitial injection from Sb complex formation in Si

Fage-Pedersen

Гайдук

Hansen

et al. 2000

Journal of Applied Physics

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“…2(b)). Therefore, it is understood that the monoclinic AsSi segregation 3 formed by furnace annealing for a long time is not formed during the RTA process. Figure 4 shows the RBS results with the Si wafer in an aligned arrangement and also in a random orientation after RTA with regard to the He incident beam.…”

Section: Resultsmentioning

confidence: 98%

Characterization of electrically inactive arsenic atoms in heavily arsenic‐doped Si

Kikuchi

Goto

2005

Surface & Interface Analysis

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The origin of electrically inactive arsenic (As) atoms in heavily As-doped Si(100) wafers after rapid thermal annealing has been studied by using several advanced techniques. Direct experimental evidence linking the formation of As-vacancy complexes to the inactive As atoms is shown. Approximately 78% of the As atoms sit on the Si substitutional sites in spite of their inactivity, However, the local strain relating to the implanted As atoms is higher than expected for the implanted As concentration. In addition, the Si lattice constant expanded as the As concentration increased. The results indicate that most of the As atoms in the heavily doped region exist in a uniform layer of As-vacancy complexes combined with substitutional As atoms.

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“…However, after thermal anneal to remove the ion implantation damage and to activate the As dopant, only about 10% of the implanted As is electrically active [25,26]. Positron annihilation studies of Ranki et al [27] on epitaxially grown Si layers with As concentrations above 10 20 cm…”

Section: Dopant Deactivation Due To Rtp Shallow As Ion Implantation Amentioning

confidence: 98%

Oxide precipitate nucleation at 300 °C in low resistivity n-type Czochralski Si

Zhang

et al. 2013

Phys. Status Solidi A

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Oxide precipitate nucleation at 300 8C in low resistivity As or Sb doped Czochralski Si is studied with and without prior rapid thermal processing (RTP). With prior RTP, a subsequent nucleation anneal even at 300 8C, leads to a high oxide precipitate density after a precipitation anneal at 1000 8C. As this is not observed without prior RTP, the effect is assumed to be related to the introduction of vacancies by RTP. As and Sb are deactivated by the formation of As x -V or Sb x -V complexes.The reduction of free carriers causes an increase of resistivity corresponding with a few times 10 17 cm À3 deactivated dopant atoms suggesting that about 10 17 cm À3 vacancies are frozen-in after RTP. During subsequent annealing at 300 8C, the resistivity recovers to its original value due to the release of vacancies that can facilitate homogeneous oxide precipitate nucleation or can lead to the formation of VO 2 and As-V-O or Sb-V-O complexes acting as heterogeneous nucleation centers that can grow further during subsequent anneals.

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Precipitation, aggregation, and diffusion in heavily arsenic-doped silicon

Cited by 87 publications

References 23 publications

Si self-interstitial injection from Sb complex formation in Si

Si self-interstitial injection from Sb complex formation in Si

Characterization of electrically inactive arsenic atoms in heavily arsenic‐doped Si

Oxide precipitate nucleation at 300 °C in low resistivity n-type Czochralski Si

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