Precise determination of polarization fields in c-plane GaN/Al x Ga1-x N/GaN heterostructures with capacitance–voltage-measurements

Susilo, Norman; Schilling, Marcel P.; Narodovitch, Michael; Yao, Hsin-Hung; Li, Xiaohang; Witzigmann, Bernd; Enslin, Johannes; Guttmann, Martin; Roumeliotis, Georgios G.; Rychetsky, Monir; Koslow, Ingrid; Wernicke, Tim; Niermann, Tore; Lehmann, Michael; Kneissl, Michael

doi:10.7567/1347-4065/ab09dd

Cited by 3 publications

(4 citation statements)

References 44 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…There is a very good agreement between our calculations and the data reported by Arulkumaran et al 55 obtained using Hall-effect measurements. The values from Susilo et al 53 and Smorchkova et al, 57 extracted from capacitance-voltage measurements, also show reasonable agreement with our simulation. Our predicted sheet charges seem to slightly underestimate (overestimate) the results of Davidsson et al 54 (Ng et al 56 ).…”

Section: Resultssupporting

confidence: 89%

“…For (AlGa)N/GaN, Eq. 12 becomes: 53 Davidsson et al, 54 Arulkumaran et al, 55 Ng et al, 56 Smorchkova et al, 57 Jia et al, 58 Li et al, 59 Jho et al, 60 Lai et al 61 and Turchinovich et al 62 Some of these values are modified from field to charge for comparison. Data points in (c) are theoretical values obtained by Caro et al 17 and similarly for (InGa)N/GaN and (InAl)N/GaN.…”

Section: Resultsmentioning

confidence: 99%

“…Red dashed and blue dashed-dotted curves correspond to the simulation results of Dreyer et al 11 and Ambacher et al, 36 respectively. Data points in (a) and (b) are experimental values taken from: Susilo et al,53 Davidsson et al,54 Arulkumaran et al,55 Ng et al,56 Smorchkova et al,57 Jia et al,58 Li et al,59 Jho et al,60 Lai et al61 and Turchinovich et al62 Some of these values are modified from field to charge for comparison. Data points in (c) are theoretical values obtained by Caro et al17 See text for a thorough discussion.…”

mentioning

confidence: 99%

See 2 more Smart Citations

Polarization Properties of Wurtzite III-Nitride Alloys Using the Hexagonal Reference Structure

Benbedra,

Meskine,

Boukortt

et al. 2023

ECS J. Solid State Sci. Technol.

View full text Add to dashboard Cite

The layered-hexagonal structure was proposed as a reference by Dreyer et al. [Phys. Rev. X 6, 021038 (2016)] to determine polarization properties of wurtzite materials. Using this reference in the context of the Berry-phase theory, we study the polarization of wurtzite III-nitride ternary alloys Al x Ga1−x N, In x Ga1−x N and In x Al1−x N. We report composition-dependent expressions of the spontaneous and piezoelectric polarizations and compare these values to the zincblende results. It is found that both spontaneous and piezoelectric components exhibit nearly linear dependence on alloy concentration, which means they follow the linear behavior predicted by Vegard’s law. The total-polarization charge of the quaternary-alloy heterostructure Al x In y Ga1−x−y N/GaN is also investigated based on the hexagonal structure. We show that the polarization charge results to be zero at certain Al and In contents, giving heterostructures free of built-in electric fields and thus allowing the design of high-efficiency optical devices. Furthermore, we compute the total-polarization charge of Al x Ga1-x N/GaN, In x Ga1−x N/GaN and In x Al1−x N/GaN. These values are compared to available theoretical and experimental data in order to validate the results of our simulation.

show abstract

Section: Resultssupporting

confidence: 89%

Section: Resultsmentioning

confidence: 99%

mentioning

confidence: 99%

See 1 more Smart Citation

Polarization Properties of Wurtzite III-Nitride Alloys Using the Hexagonal Reference Structure

Benbedra,

Meskine,

Boukortt

et al. 2023

ECS J. Solid State Sci. Technol.

View full text Add to dashboard Cite

show abstract

“…These fitting parameters give the smallest root mean square error between experimental data and the simulation. The reduced strength of the polarization field does not match to a recent publication from Susilo et al-determined by capacitance-voltage-measurements[34]. Nevertheless, the reduction of polarization fields has been already observed by optical measurements in previous publications[35] and is considered in simulations for AlGaN heterostructures in literature[36].…”

mentioning

confidence: 70%

Effect of quantum barrier composition on electro-optical properties of AlGaN-based UVC light emitting diodes

Guttmann

Höpfner

Reich

et al. 2019

Semicond. Sci. Technol.

Self Cite

View full text Add to dashboard Cite

The height of the barrier around the AlGaN quantum well has a strong impact on the external quantum efficiency of UVC light emitting diodes (LEDs) as it affects the carrier confinement, the polarization fields, and the injection efficiency as well as the optical polarization and emission profile of the emitted light. The electro-optical properties such as emission wavelength, optical polarization, and light output power of AlGaN multiple quantum well (MQW) LEDs emitting around 270 nm with Al mole fraction in the Al x Ga 1−x N barriers between x=55% and x=76% are investigated by electroluminescence measurements. In order to analyze the experimental results, 6-band k•p method-based simulations as well as single band Schrödinger-Poisson driftdiffusion simulations have been conducted. It was found that for the same current density of 100 A cm −2 the on-wafer emission power reaches a maximum for an Al mole fraction of x=67% in the Al x Ga 1−x N barrier of the Al 0.53 Ga 0.47 N MQW (0.84 mW at 40 mA). Furthermore, the emission wavelength decreases and the fraction of transverse-electric polarized light emission increases with increasing Al mole fraction in the barrier. This is consistent with drift-diffusion and k•p simulations, attributing the changes of the emission power primarily to changes in charge carrier injection and electrical confinement in the quantum wells rather than to changes in the optical polarization and light extraction.

show abstract

Space charge profile study of AlGaN-based p-type distributed polarization doped claddings without impurity doping for UV-C laser diodes

Zhang

Kushimoto

Horita

et al. 2020

Applied Physics Letters

View full text Add to dashboard Cite

The space charge density profile of the nondoped AlGaN-based p-type cladding layer for UV-C laser diodes realized by distributed polarization doping is examined theoretically and experimentally. The analysis of the capacitance-voltage measurement revealed that the average effective acceptor density of 4.2 × 1017 cm–3 is achieved even without impurity doping, and it is in good agreement with the theoretical prediction from the measured Al composition profile. This result suggests that the cladding layer is ideal for UV-C LDs because it provides sufficient hole injection while potentially avoiding internal losses due to impurity doping.

show abstract

Precise determination of polarization fields in c-plane GaN/Al_xGa_1-xN/GaN heterostructures with capacitance–voltage-measurements

Cited by 3 publications

References 44 publications

Polarization Properties of Wurtzite III-Nitride Alloys Using the Hexagonal Reference Structure

Polarization Properties of Wurtzite III-Nitride Alloys Using the Hexagonal Reference Structure

Effect of quantum barrier composition on electro-optical properties of AlGaN-based UVC light emitting diodes

Space charge profile study of AlGaN-based p-type distributed polarization doped claddings without impurity doping for UV-C laser diodes

Contact Info

Product

Resources

About