Precise lattice parameter determination of dislocation-free gallium arsenide—I

Baker, Jeff; Hart, Michael; Halliwell, M. A. G.; Heckingbottom, R.

doi:10.1016/0038-1101(76)90031-9

Cited by 59 publications

(7 citation statements)

References 12 publications

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“…In particular, the use of such layers for optoelectronic (1, 2), microwave (3,4), and high speed digital circuits (4) has given promising results. This technique has also produced layers approaching the purity and mobility of the best layers grown by the halide or hydride techniques, and has generated much interest due to its simplicity and flexibility.…”

Section: Resultsmentioning

confidence: 99%

Lattice Parameter Changes in Al0.39Ga0.61As Due to O, Ge, Si, and S Doping

Wagner¹,

Schumaker²,

Zilko³

et al. 1983

J. Electrochem. Soc.

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The change in lattice parameter of epitaxial films of Alo.zgGa0.61As was investigated as a function of growth solution doping. With the lattice constant of GaAs as the reference constant, it was found that the presence of either O2 in the growth ambient or Ge in the growth solutions dilated the lattice. Growth solution doping with Si was found to initially dilate the lattice while further Si doping resulted in a lattice contraction. Sulfur doping contracted the lattice. It was found that the lattice dilation due to Os in the growth ambient principally resulted from a reduction in the background S contamination of the epitaxial films.

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Section: Resultsmentioning

confidence: 99%

Lattice Parameter Changes in Al0.39Ga0.61As Due to O, Ge, Si, and S Doping

Wagner¹,

Schumaker²,

Zilko³

et al. 1983

J. Electrochem. Soc.

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“…The dependence of the lattice constant versus silicon concentration for GaAs bulk crystals and epitaxial layers grown by vaporphase epitaxy ͑VPE͒ and liquid-phase epitaxy ͑LPE͒ was examined by a number of authors. [19][20][21][22] The results are scattered. In the work of Fewster and Willoughby 19 the authors observed that ⌬a/a for variously doped n-type samples ͑carrier concentration up to about 5ϫ10 18 cm Ϫ3 ͒ varied between ϩ3ϫ10 Ϫ5 and Ϫ2ϫ10 Ϫ5 without a clear trend.…”

mentioning

confidence: 99%

Lattice dilation by free electrons in heavily doped GaAs:Si

Leszczyński

Bąk‐Misiuk

Domagała

et al. 1995

Applied Physics Letters

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Lattice constants of GaAs layers grown by molecular beam epitaxy were examined by using the high resolution x-ray diffractometer. For highly doped samples ͑up to 9ϫ10 18 cm Ϫ3 of free-electron concentration͒ we observed an increase of the lattice constant with respect to the undoped layers. Since substitutional silicon atoms decrease the lattice constant of GaAs, the results are explained by the influence of free-electrons via the deformation potential of the ⌫ minimum of the conduction band. The best fit to our diffractometric data was obtained for the band-gap deformation potential equal to Ϫ8.5 eV.

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“…On the other hand, it is known that some changes in the lattice parameter are produced by common dopants from groups IV and VI in GaAs crystals [8,10]. Homoepitaxial GaAs/GaAs structures.…”

Section: -Theoretical Approachmentioning

confidence: 99%

X-ray double-crystal rocking curves in GaAlAs/GaAs heterostructures

Bocchi¹,

Ferrari²,

Franzosi³

1991

Il Nuovo Cimento D

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ricevuto il 9 Marzo 89; manoscritto revisionato ricevuto il 16 Aprile 1990)Summary. --X-ray double-crystal rocking curves of Gal_~AI~As/GaAs heterostructures have been calculated using a dynamical diffraction model for the general case of Bragg reflection geometry. Different experimental configurations have been considered and the possibility of studying both slightly mismatched and relatively thin layers has been investigated. Experimental rocking curves have been measured using the Cu Kal radiation, the 004 symmetric reflection and a perfect crystal as the monochromator. An excellent agreement between calculated and experimental rocking curves has been found and this demonstrates the reliability of both the experimental procedure and the theoretical approach.PACS 61.55 -Specific structures ef elements and alloys. -Introduction.The X-ray double-crystal diffractometry (DCD) provides a rapid and nondestructive means of assessing hetero-epitaxial structures. A great deal of information is contained in the DCD rocking curves. The lattice mismatch Aa/a between epflayers and substrate can be obtained from the angular spacing of the Bragg peaks; since angular differences as low as a few tens of seconds of arc can be revealed, Aa/a values of the order of a few 10 -4 or less can be easily evaluated. The elastic tetragonal distortion of the unit cell of the epilayers is usually determined by a suitable choice of the experimental geometry. The shape of the Bragg peaks is related to the crystal perfection. More specifically, the full width at half-maximum (FWHM) of the Bragg peak is related to the crystal quality of the sample investigated." Finally, DCD rocking curves allow to measure the epilayer thickness.A quantitative analysis of the DCD rocking curves needs a reliable theoretical model and computation programs. In this paper a theoretical approach similar to that reported elsewhere [i, 2] has been used. This approach provides two main advantages: i) it is quite general, since it comes from the dynamical X-ray diffraction theory of distorted crystals; ii) it does not require long computation times, owing to the fact that an analytical solution of the basic differential equations is used. The theoretical model has been applied to Gal_~Al~As/GaAs heterostructures. The 1 -Il Nuovo Cime~o D 1

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Precise lattice parameter determination of dislocation-free gallium arsenide—I

Cited by 59 publications

References 12 publications

Lattice Parameter Changes in Al0.39Ga0.61As Due to O, Ge, Si, and S Doping

Lattice Parameter Changes in Al0.39Ga0.61As Due to O, Ge, Si, and S Doping

Lattice dilation by free electrons in heavily doped GaAs:Si

X-ray double-crystal rocking curves in GaAlAs/GaAs heterostructures

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