Precision of single-engage micro Hall effect measurements

Henrichsen, Henrik Hartmann; Hansen, Ole; Kjær, Daniel; Nielsen, Peter Brønnum; Wang, Fei; Petersen, Dirch Hjorth

doi:10.1109/iwjt.2014.6842029

Cited by 7 publications

(6 citation statements)

References 13 publications

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“…The relative standard deviation for N HS and μ H is similar in magnitude to the values reported in. 37 The results are shown in Fig. 7 with the measured p H values found to be similar for all samples.…”

Section: Si X Y Gexbysupporting

confidence: 56%

B and Ga Co-Doped Si_1−xGe_x for p-Type Source/Drain Contacts

Rengo¹,

Porret²,

Hikavyy³

et al. 2022

ECS J. Solid State Sci. Technol.

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Contact resistivity reduction at the source/drain contacts is one of the main requirements for the fabrication of future MOS devices. Current research focuses on methods to increase the active doping concentration near the contact region in silicon-germanium S/D epilayers. A possible approach consists in adding co-dopants during the epitaxy process. In the case of p-MOS, gallium can be used in addition to boron. In this work, the properties of in situ Ga and B co-doped Si0.55Ge0.45 layers are discussed. The surface morphologies, layer compositions, and structural and electrical material properties are described and compared with those of a B-doped Si0.55Ge0.45 reference layer. Ga segregation occurring at the growth surface is evidenced. Post-epi surface cleans are required to obtain the correct Ga profiles in the Si1-xGex layers from secondary ion mass spectrometry, otherwise altered by surface Ga knock-on. The layer morphologies, crystalline quality, and electrical properties show a progressive degradation with increasing Ga dose. Finally, specific titanium-Si1-xGex:B(:Ga) contact resistivity values have been extracted using the multi-ring circular transmission line method. The contact resistivity is lower for the Ga co-doped samples, with the lowest value (< 3 x 10-9 Ω.cm2) being obtained for the sample grown with the lowest Ga-precursor flow.

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Section: Si X Y Gexbysupporting

confidence: 56%

B and Ga Co-Doped Si_1−xGe_x for p-Type Source/Drain Contacts

Rengo¹,

Porret²,

Hikavyy³

et al. 2022

ECS J. Solid State Sci. Technol.

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“…The carrier concentration and Hall mobility were measured on the AZO/quartz films with an industrial micro-Hall setup (CAPRES A/S) including an equidistant, collinear micro 7-point probe with electrode spacing of 10 µm. The measurement principle and data analysis procedure have been described elsewhere [20,21].…”

Section: Methodsmentioning

confidence: 99%

On performance limitations and property correlations of Al-doped ZnO deposited by radio-frequency sputtering

Crovetto¹,

Ottsen²,

Stamate³

et al. 2016

J. Phys. D: Appl. Phys.

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Abstract. The electrical properties of RF-sputtered Al-doped ZnO are often spatially inhomogeneous and strongly dependent on deposition parameters. In this work, we study the mechanisms that limit the minimum resistivity achievable under different deposition regimes. In a low-and intermediate pressure regime, we find a generalized dependence of the electrical properties, grain size, texture, and Al content on compressive stress, regardless of sputtering pressure or position on the substrate. In a high-pressure regime, a porous microstructure limits the achievable resistivity and causes it to increase over time as well. The primary cause of inhomogeneity in the electrical properties is identified as energetic particle bombardment. Inhomogeneity in oxygen content is also observed, but its effect on the electrical properties is small and limited to the carrier mobility.

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“…However, fully automatic metrology systems are most often placed in production environments with significant ambient vibrational noise, which could result in unintended motion of the contact points. If a static contact is not maintained during a measurement sequence, the result is discarded due to stringent measurement requirements imposed by the need for high reproducibility [12,[17][18][19][20].…”

Section: Introductionmentioning

confidence: 99%

Vibration tolerance of micro-electrodes

Kalhauge¹,

Henrichsen²,

Wang³

et al. 2018

J. Micromech. Microeng.

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Precision of single-engage micro Hall effect measurements

Cited by 7 publications

References 13 publications

B and Ga Co-Doped Si_1−xGe_x for p-Type Source/Drain Contacts

B and Ga Co-Doped Si_1−xGe_x for p-Type Source/Drain Contacts

On performance limitations and property correlations of Al-doped ZnO deposited by radio-frequency sputtering

Vibration tolerance of micro-electrodes

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Precision of single-engage micro Hall effect measurements

Cited by 7 publications

References 13 publications

B and Ga Co-Doped Si1−xGex for p-Type Source/Drain Contacts

B and Ga Co-Doped Si1−xGex for p-Type Source/Drain Contacts

On performance limitations and property correlations of Al-doped ZnO deposited by radio-frequency sputtering

Vibration tolerance of micro-electrodes

Contact Info

Product

Resources

About

B and Ga Co-Doped Si_1−xGe_x for p-Type Source/Drain Contacts

B and Ga Co-Doped Si_1−xGe_x for p-Type Source/Drain Contacts