Precursor-based designs of nano-structures and their processing for Co(W) alloy films as a single layered barrier/liner layer in future Cu-interconnect

Shimizu, Haruka; Shima, Keisetsu; Suzuki, Yudai; Momose, Takeshi; Shimogaki, Yukihiro

doi:10.1039/c4tc01088d

Cited by 14 publications

(21 citation statements)

References 48 publications

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“…Intermetallic phases in Pt–In, Pt–Sn, and Ni–Fe systems have been obtained by the postdeposition reduction of the corresponding ALD oxides. There are also some ALD studies on metal alloys, such as Pt–Ir, Pd–Pt, Ru–Pt, Ru–Co, Co–W, Co–Pt, Ru–Mn, and Cu–Mn, but no reports exist on materials exhibiting a specific intermetallic structure. Co–Sn and Ni–Sn with varying stoichiometry, including the intermetallic Co 3 Sn 2 and Ni 3 Sn 2 phases, have generally been prepared by, for example, ball milling, melting, different solution‐based techniques, solvo‐ and hydrothermal routes, electrodeposition, sputtering, and electron beam evaporation .…”

Section: Introductionmentioning

confidence: 99%

Atomic Layer Deposition of Intermetallic Co₃Sn₂ and Ni₃Sn₂ Thin Films

Väyrynen

Hatanpää

Mattinen

et al. 2018

Adv Materials Inter

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crystal structures of the participating metal components. An intermetallic compound is formed when the bonds between the dissimilar atoms are stronger than the bonds between the atoms of the same element.Because of their specific structure, intermetallic compounds usually exhibit unique physical and chemical properties that are potentially superior to their disordered alloy analogues and the pure metals. Such properties include, for example, magnetoresistance, [3,4] superconductivity, [5][6][7] enhanced catalytic activity, [8,9] and hydrogen storage capability. [10] Intermetallics and alloys containing Co or Ni and Sn with varying stoichiometry have mostly been studied as anode materials for Li-and Na-ion batteries. [11][12][13][14][15][16][17][18][19] As ferromagnetic materials, they also show potential for magnetic devices. [20][21][22] Furthermore, intermetallic Co-Sn and Ni-Sn compounds have also been studied for catalytic purposes. [23][24][25][26] For future applications like nanoelectronic devices, it is pivotal to be able to control the thickness and composition of thin films with sub-nanometer accuracy. Atomic layer deposition (ALD) is a thin film preparation method based on repeated, saturative, and irreversible surface reactions between alternately supplied gaseous precursors ensuring self-limiting growth of the desired material. [27,28] Owing to the self-limiting growth mechanism, ALD can be used to deposit uniform thin films over complex structures in a controlled and reproducible manner. No previous reports on the ALD of intermetallic Co 3 Sn 2 or Ni 3 Sn 2 thin films are found in the literature, and the ALD of other intermetallic compounds has also been scarce if existent at all. Intermetallic phases in Pt-In, [29] Pt-Sn, [30] and Ni-Fe [31] systems have been obtained by the postdeposition reduction of the corresponding ALD oxides. There are also some ALD studies on metal alloys, such as Pt-Ir, [32] Pd-Pt, [33][34][35] Ru-Pt, [36] Ru-Co, [37] Co-W, [38,39] Co-Pt, [40] Ru-Mn, [41] and Cu-Mn, [42] but no reports exist on materials exhibiting a specific intermetallic structure. Co-Sn and Ni-Sn with varying stoichiometry, including the intermetallic Co 3 Sn 2 and Ni 3 Sn 2 phases, have generally been prepared by, for example, ball Intermetallics form a versatile group of materials that possess unique properties ranging from superconductivity to giant magnetoresistance. The intermetallic Co-Sn and Ni-Sn compounds are promising materials for magnetic applications as well as for anodes in lithium-and sodium-ion batteries. Herein, a method is presented for the preparation of Co 3 Sn 2 and Ni 3 Sn 2 thin films using diamine adducts of cobalt(II) and nickel(II) chlorides, CoCl 2 (TMEDA) and NiCl 2 (TMPDA) (TMEDA = N,N,N′,N′tetramethylethylenediamine, TMPDA = N,N,N′,N′-tetramethyl-1,3propanediamine) combined with tributyltin hydride. The films are grown by atomic layer deposition (ALD), a technique that enables conformal film deposition with sub-nanometer thickness control. The Co 3 Sn 2 process fulfills the ...

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Section: Introductionmentioning

confidence: 99%

Atomic Layer Deposition of Intermetallic Co₃Sn₂ and Ni₃Sn₂ Thin Films

Väyrynen

Hatanpää

Mattinen

et al. 2018

Adv Materials Inter

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“…With the development of integrated circuits of the higher density and speed, Cu is being used as a main metallic interconnect material because of its low resistance‐capacitance (RC) delay of integrated circuit (IC) and high electromigration resistance of metallic interconnect lines . As the feature size of electronic devices in IC technology is continuously scaling down gradually, the interdiffusion between materials become more severe at the same the temperatures of processing and operation.…”

Section: Introductionmentioning

confidence: 99%

Barrier properties of ultrathin amorphous Al–Ni alloy film in Cu/Si or Cu/SiO ₂ contact system

Chen

Huo

Dai

et al. 2016

Phys. Status Solidi A

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The diffusion barrier performance of an ultrathin amorphous Al–Ni (a‐Al–Ni) film as barrier layer in a sandwiched scheme Cu/barrier/Si and Cu/barrier/SiO2/Si is investigated. Microstructures, electrical properties, surface morphologies, and interfaces for the samples annealed at various temperatures are measured using X‐ray diffraction (XRD), sheet resistance measurements, atomic force microscopy (AFM), and transmission electron microscopy (TEM). The results present 4.5‐nm‐thick a‐Al–Ni can achieve good thermal stability up to 750 °C. Cu silicide cannot be observed in XRD data up to 800 °C. However, the abrupt increase in sheet resistance value and the appearing island‐like grains in AFM images for the sample annealed at 800 °C indicate the failure of the barrier structure. The failure mechanism of barrier layer is discussed and can be attributed to the dewetting of Cu film along grain boundary grooving. The amorphization of the barrier layer and clear interfaces with its adjacent layers are further authenticated by high resolution TEM. It is also found that the growth orientation and surface morphology of Cu film are related to the substrates (monocrystalline Si and amorphous SiO2) under the barrier layer.

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“…Chipmakers are changing these barrier and liner layers 166 either by changing processes from physical vapor deposition (PVD) to atomic layer deposition (ALD) for better thickness control (as already implemented for the TaN barrier), or by changing materials (such as moving the liner from Ta to Co to Ru), or perhaps even by layer elimination (i.e. using a single alloy for the barrier and liner, or eliminating the Cu seed layer and plating directly onto the liner).…”

Section: Challenges In Scaling Interconnectsmentioning

confidence: 99%

Scaling Challenges for Advanced CMOS Devices

Jacob

Xie

Sung

et al. 2017

Int. J. Hi. Spe. Ele. Syst.

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The economic health of the semiconductor industry requires substantial scaling of chip power, performance, and area with every new technology node that is ramped into manufacturing in two year intervals. With no direct physical link to any particular design dimensions, industry wide the technology node names are chosen to reflect the roughly 70% scaling of linear dimensions necessary to enable the doubling of transistor density predicted by Moore's law and typically progress as 22nm, 14nm, 10nm, 7nm, 5nm, 3nm etc. At the time of this writing, the most advanced technology node in volume manufacturing is the 14nm node with the 7nm node in advanced development and 5nm in early exploration. The technology challenges to reach thus far have not been trivial. This review addresses the past innovation in response to the device challenges and discusses in-depth the integration challenges associated with the sub-22nm non-planar finFET technologies that are either in advanced technology development or in manufacturing. It discusses the integration challenges in patterning for both the front-end-of-line and back-end-of-line elements in the CMOS transistor. In addition, this article also gives a brief review of integrating an alternate channel material into the finFET technology, as well as next generation device architectures such as nanowire and vertical FETs. Lastly, it also discusses challenges dictated by the need to interconnect the ever-increasing density of transistors.

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Precursor-based designs of nano-structures and their processing for Co(W) alloy films as a single layered barrier/liner layer in future Cu-interconnect

Abstract: We designed Co(W) films with the self-assembled grain-boundary stuffing as a single-layer barrier/liner for future ULSI Cu-interconnects. HR-TEM and EDX observations confirmed the validity of our materials design and good barrier performance in Co(W) films.

Cited by 14 publications

References 48 publications

Atomic Layer Deposition of Intermetallic Co₃Sn₂ and Ni₃Sn₂ Thin Films

Atomic Layer Deposition of Intermetallic Co₃Sn₂ and Ni₃Sn₂ Thin Films

Barrier properties of ultrathin amorphous Al–Ni alloy film in Cu/Si or Cu/SiO ₂ contact system

Scaling Challenges for Advanced CMOS Devices

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Precursor-based designs of nano-structures and their processing for Co(W) alloy films as a single layered barrier/liner layer in future Cu-interconnect

Abstract: We designed Co(W) films with the self-assembled grain-boundary stuffing as a single-layer barrier/liner for future ULSI Cu-interconnects. HR-TEM and EDX observations confirmed the validity of our materials design and good barrier performance in Co(W) films.

Cited by 14 publications

References 48 publications

Atomic Layer Deposition of Intermetallic Co3Sn2 and Ni3Sn2 Thin Films

Atomic Layer Deposition of Intermetallic Co3Sn2 and Ni3Sn2 Thin Films

Barrier properties of ultrathin amorphous Al–Ni alloy film in Cu/Si or Cu/SiO 2 contact system

Scaling Challenges for Advanced CMOS Devices

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Atomic Layer Deposition of Intermetallic Co₃Sn₂ and Ni₃Sn₂ Thin Films

Atomic Layer Deposition of Intermetallic Co₃Sn₂ and Ni₃Sn₂ Thin Films

Barrier properties of ultrathin amorphous Al–Ni alloy film in Cu/Si or Cu/SiO ₂ contact system