Prediction of midfrequency sputtering cathode erosion position with vertical magnetic field

Abstract

In this paper, the etching position of a target was predicted using magnetic field simulation. The magnetic field distribution was simulated with the finite element analysis method, the distribution of the magnetic field on the target surface was measured by a Gaussmeter, and the target erosion profile was characterized and compared with that of the simulation results. In this experiment, cylindrical cathode magnets were specially designed to control the etching behaviour at the corresponding bend location. Because the vertical component of the magnetic field at the bend was strongly influenced by the cylindrical magnets, the vertical magnetic field appeared to determine the erosion position, and this position was predicted successfully by the simulation. Furthermore, the deepest etched position was located where the vertical magnetic field component decreased to zero. The results of this paper can be used as a reference in cathode structure design and target utilization optimization.