Preferential Attachment of H in Amorphous Hydrogenated Binary Semiconductors and Consequent Inferior Reduction of Pseudogap State Density

Paul, William; Paul, Dilip K.; Roedern, B. von; Blake, J.; Oguz, S.

doi:10.1103/physrevlett.46.1016

Cited by 168 publications

(39 citation statements)

References 8 publications

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“…The lattice of a-Si, a-Ge and a-SiGe is partially disordered with distorted bond lengths and angles which cause the breaking of numerous Si-Si, Ge-Ge and Si-Ge bonds with the creation of dangling bonds that introduce recombination centers in the band gap. Passivation of such dangling bonds is achieved by adding hydrogen to the amorphous phase [6].…”

Section: Introductionmentioning

confidence: 99%

Hydrogen release in annealed hydrogenated a‐Si/a‐Ge multilayers

Frigeri¹,

Serényi²,

Csík³

et al. 2011

Cryst. Res. Technol.

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A combined study of hydrogenated sputtered single a-Si and a-Ge layers and a-Si/a-Ge multilayers (MLs) has been carried out in order to establish the reasons of H release and associated structural degradation of the MLs when they are submitted to annealing. ERDA analysis of the single layers of a-Si and a-Ge shows that H escapes from the layer much more efficiently in a-Ge than in a-Si. This agrees with IR absorbance measurements on the MLs showing that the Ge-H signal disappears at a lower annealing time (for a given annealing temperature) than Si-H and Si-H 2 do. The conclusion is drawn that the structural degradation of aSi/a-Ge MLs primary starts with release of H in the Ge layers most probably because of the smaller binding energy of the H-Ge bond and the greater weakness of the Ge lattice.

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Section: Introductionmentioning

confidence: 99%

Hydrogen release in annealed hydrogenated a‐Si/a‐Ge multilayers

Frigeri¹,

Serényi²,

Csík³

et al. 2011

Cryst. Res. Technol.

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“…The concentration of hydrogen in the a-Ge:H and a-Si:H films was determined with the aid of the equation [15][16][17][18][19] …”

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confidence: 99%

“…It is clear that Eq. (6) characterizes the vibrational mode of stretching of a-Ge:H and a-Si:H. In [18][19][20][21], a "prefererable" additional parameter was introduced to estimate the relative bonding of hydrogen for amorphous a-Si 1-x Ge x :H:…”

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confidence: 99%

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Optical Properties of Amorphous Films of an a-Si1−x Gex:H Solid Solution with Different Concentrations of Hydrogen

Nadzhafov

Isakov

2005

J Appl Spectrosc

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The IR absorption spectra of hydrogenated amorphous films of an a-Si 0.60 Ge 0.40 :H solid solution that were obtained by plasmachemical deposition at different partial pressures of hydrogen P H 2 have been investigated.The oscillator strengths Γ that depend substantially on P H 2 have been determined. It is shown that hydrogen is contained in the films mainly in the GeH and SiH forms. Using integral absorptions I w , the concentrations of hydrogen were determined. The highest value of P H 2 is observed at Γ = 0.51, P = 4.16, N H = 9.7⋅10 21 cm -3 , and C H = 23.7 at.%. It has been established that the oscillator strengths depend on the hydrogen concentration: they decrease on hydrogen effusion and increase with the hydrogen concentration. It is shown that the hydrogen concentration in the films of the a-Si 0.60 Ge 0.40 :H solid solution can be controlled by changing its pressure.

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“…These dangling bonds will behave like excess carrier traps and severely degrade the lifetime the carriers. It is well known that in PECVDgrown a-SiGe:H, H bonds preferentially to Si by a factor of at least five [58], while in high-growth-rate condition, the factor seems to be as large as ten [59]. Therefore, we can barely see the 1 8 9 0~m -~ Ge-H peak but only the 2000cm-' Si-H peak.…”

Section: Discussion About the Growth Chemistrymentioning

confidence: 72%

High growth rate deposition of hydrogenated amorphous silicon-germanium films and devices using ECR-PECVD

Liu

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Preferential Attachment of H in Amorphous Hydrogenated Binary Semiconductors and Consequent Inferior Reduction of Pseudogap State Density

Cited by 168 publications

References 8 publications

Hydrogen release in annealed hydrogenated a‐Si/a‐Ge multilayers

Hydrogen release in annealed hydrogenated a‐Si/a‐Ge multilayers

Optical Properties of Amorphous Films of an a-Si1−x Gex:H Solid Solution with Different Concentrations of Hydrogen

High growth rate deposition of hydrogenated amorphous silicon-germanium films and devices using ECR-PECVD

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