Preferential regrowth of indium–tin oxide (ITO) films deposited on GaN (0001) by rf-magnetron sputter

Influence of annealing on ZnO films grown by metal–organic chemical vapor deposition

“…ZnO is extensively studied because of its potential application in various fields such as gas sensors [1], solar cells [2], photodetectors, light emitting diodes (LEDs), laser systems [3], etc. ZnO films are grown by many different methods such as magnetron sputtering [4,5], spray pyrolysis [6], the sol-gel process [7][8][9][10], pulsed laser deposition (PLD) [11] and metal-organic chemical vapor deposition (MOCVD) [12][13][14].…”

Growth of In2O3 single-crystalline film on sapphire (0001) substrate by molecular beam epitaxy

“…TCOs are necessary either to raise the work functions for Schottky contacts in metal-semiconductor-metal (MSM) photodiodes or to lower the contact resistance for ohmic contacts in photoswitching devices. The well-known transparent tin-doped indium oxide (ITO) has been suggested due to its potent nature of ohmic or Schottky contacts, as observed in nGaN films [15,16]. ITO films may be more promising for such applications in ZnO-based devices mainly due to its high stability in their coherent oxide growth process.…”

Au-Doped Indium Tin Oxide Ohmic Contacts to p-Type GaN

“…19 The work function of Au is $5.1 eV, 0.5 eV higher than that of sputter-deposited ITO. 20 It is thus plausible that mixing Au with ITO could raise its work function and reduce the ITO/p-GaN Schottky barrier height. The mixing may be enhanced by the alloying between Au with ITO upon annealing.…”