1994
DOI: 10.1007/bf00921251
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Preparation and characterization of pulse-plating electrodeposited CuInSe2 thin films

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Cited by 19 publications
(14 citation statements)
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“…used in CED. One-step CED of CIS is mostly carried out potentiostatically at RT by using sulfates Copper selenides obtained are depending on the solution composition and the diffusion conditions [93][94][95][96][97][98][99][100][101][102][103][104] or chlorides [105][106][107][108][109][110][111][112][113][114],…”
Section: Chemical Bath Deposition (Cbd)mentioning
confidence: 99%
See 1 more Smart Citation
“…used in CED. One-step CED of CIS is mostly carried out potentiostatically at RT by using sulfates Copper selenides obtained are depending on the solution composition and the diffusion conditions [93][94][95][96][97][98][99][100][101][102][103][104] or chlorides [105][106][107][108][109][110][111][112][113][114],…”
Section: Chemical Bath Deposition (Cbd)mentioning
confidence: 99%
“…Galvanostatic [106,107,115] and Pulsed CED [102,113,114] The as-deposited films deposited between 0 to -0.6 V (SCE) showed the XRD reflection of CISe and Cu3Se2where as only those of CISe were found for films deposited at -0.8 eV.…”
Section: Chemical Bath Deposition (Cbd)mentioning
confidence: 99%
“…In the majority of experiments, electrodeposition has been carried out under potentiostatic control. However, to improve the morphology of the films, enhance In and Ga incorporation or tune the properties of the semiconductor layers, pulsed electrodeposition has been investigated 38–45, sometimes in combination with flow cells 46. Graded layer compositions have been demonstrated using such methods 47–53.…”
Section: Electrochemical Processes For Cigs Depositionmentioning
confidence: 99%
“…In this work the Cu-In film was prepared in a nonaqueous bath and the Se was deposited by thermal evaporation with the rapid thermal anneal taking place in the vacuum deposition system at temperatures of 300-500 C with the best results in terms of crystallinity and stoichiometry obtained at 400 C. Thouin and co-workers [142] studied the deposition of copper indium diselenide in the presence of excess In(III) and showed that the presence of the In(III) in the solution favors the reduction of Se(IV) to Se(II) via the formation of CuInSe 2 . Edamura and Muto [143] employed a pulse plating technique to deposit CuInSe 2 on ITO substrates. They used and aqueous solution of 2 mM SeO 2 , 2 mM CuSO 4, and 20 mM InCl 3 at a pH of 1.5 at room temperature using an ITO-glass substrate as the working electrode, platinum counter electrode, and saturated calomel reference electrode.…”
Section: Copper Indium Diselenide (Cuinse 2 )mentioning
confidence: 99%