Preparation and characterization of semi-insulating undoped indium phosphide

Fabrication of undoped semi-insulating InP by multiple-step wafer annealing

“…8 • Impurity defects occupying indium atomic sites which act as deep acceptors are formed by annealing and compensate shallow donors, so that the small amount of Fe becomes sufficient to realize semi-insulation. 15 • In InP, hydrogen is incorporated and forms a hydrogen-phosphorus vacancy complex which acts as a shallow donor. Annealing will diffuseout hydrogens and the small amount of Fe becomes sufficient to realize semi-insulation.…”

Thermally induced conduction type conversion in n-type InP

“…[1][2][3][4][5] Generally, thermally induced defects in the annealed material can be detected by different spectroscopy methods. [6][7][8] However, most of the reports so far 4-8 ͑including our previous work͒, 9 have been carried out in a single annealing run with high temperature and long duration.…”

Room-temperature particle detectors with guard rings based on semi-insulating InP co-doped with Ti and Zn

“…To achieve lower Fe concentrations, partial pre-compensations by a shallow-acceptor impurity were used, and crystals co-doped with Fe and Zn, InP:(Fe, Zn), were studied [8]. Alternative approaches to the preparation of SI InP were high-temperature annealing of undoped InP in a purephosphorus or iron-phosphide ambient [9,10]. The high-temperature long-term annealing, results in a decrease in the shallow hydrogen-related defects denoted as V In H 4 , which are always present in the InP grown by the LEC technique.…”