Preparation and Patterning of GaSb Surfaces with Br-IBAE for Antimonide Based Molecular Beam Epitaxy

Vangala, Shivashankar; Krejca, Brian D.; Krishnaswami, Kannan; Dauplaise, H.M.; Qian, Xifeng; Zhu, Bofeng; Ospina, M.; Sung, Changmo; Vaccaro, K.; Bliss, D.; Goodhue, W. D.

doi:10.1557/proc-792-r9.2

Cited by 3 publications

(4 citation statements)

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“…The substrate-film transition for Br-IBAE finished GaSb substrates showed a smooth, defect-free transition with no discernable interface. 7 However, due to the increased surface roughness of the surface template, there was simultaneous growth along several crystal planes and thus the films did not benefit from selfplanarizing. Epitaxial growth at lower substrate temperatures has been suggested in the literature to improve episurface quality.…”

Section: Results and Analysismentioning

confidence: 99%

“…Several wet etch techniques have been developed to prepare GaSb surfaces for epitaxial growth with varying degrees of success. 3 Recently, dry-etch techniques using the gas-cluster ion beam (GCIB) 4,5,6 technique, incorporating either O 2 or CF 4 /O 2 as the source gas, and the bromine ion-beam assisted etching (Br-IBAE) 7 technique have been successfully implemented as surface preparation methods for molecular beam epitaxy (MBE). Here, a measurement of rms roughness (R rms ) and maximum peak-to-valley heights (∆Z) showed that the chosen GCIB processes consistently smoothed GaSb surfaces while the Br-IBAE process produced rougher surfaces.…”

Section: Introductionmentioning

confidence: 99%

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Roughness Analysis of Episurfaces Grown on Ion-Beam Processed GaSb Substrates

et al. 2004

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High-quality GaSb substrates with minimal surface roughness and thin, uniform oxide layers are critical for developing low-power, epitaxy-based, electronic and optoelectronic devices. Ion-beam processing techniques of gas-cluster ion beam (GCIB) and bromine ion-beam assisted etching (Br-IBAE) were investigated as to their potential for improving the suitability of substrate surfaces for molecular beam epitaxial (MBE) growth. Statistical analysis of the residual surface roughness provides insight into ion-beam processing and its impact on epitaxial growth. Images of episurfaces grown on chemical mechanical polished (CMP), Br-IBAE, and GCIB finished substrates were obtained using atomic force microscopy (AFM) and these were statistically analyzed to characterize their surface roughness properties. Autocorrelation analysis of the first two types of episurfaces showed a quick loss of correlation within ~100 nm. The episurface with Br-IBAE also showed isotropic mound roughness with sharp point-like protrusions. The GCIB prepared episurfaces exhibited the formation of uniform step-terrace patterns with monatomic steps and wide terraces as indicated by the strong, long range (>0.5 µm) correlations. Statistical analysis of the GCIB episurfaces showed self-similar random fractal behavior over eight orders of magnitude in the power spectral density (PSD) with a fractal dimension of ~2.5.

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Section: Results and Analysismentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Roughness Analysis of Episurfaces Grown on Ion-Beam Processed GaSb Substrates

et al. 2004

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“…The substrates were then GCIB and Br-IBAE processed, details of which can be found in Refs. [11,12], respectively. The process parameters employed were as follows:…”

Section: Surface Treatment Of Gasbmentioning

confidence: 99%

“…Epitaxial growth on GCIB processed substrates showed improved substrate/epi interfaces, when compared to CMP surfaces, with the presence of a dislocation layers that was attributed to incomplete oxide desorbtion [11]. An alternate surface preparation method using Br-ion beamassisted etching (Br-IBAE) was also implemented [12]. Though the Br-IBAE process increased surface roughness of the GaSb substrates, epitaxial growth showed smooth, dislocation-free substrate-to-epi transitions with no discernable interface, attributed to complete oxide desorption.…”

Section: Introductionmentioning

confidence: 99%

Molecular beam epitaxy on gas cluster ion beam-prepared GaSb substrates: Towards improved surfaces and interfaces

Krishnaswami

Vangala

Dauplaise

et al. 2008

Journal of Crystal Growth

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Fabrication of Nanotips and Microbeams in Antimonide Based Semiconductor Material using Bromine Ion Beam Assisted Etching

et al. 2003

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Antimonide-based compound semiconductors have emerged as the materials of choice for fabricating high-speed low-power electronics and electro-optics for applications requiring miniaturization and portability. In this work Br-IBAE is shown to be an anisotropic antimonide etching technique that is capable of generating novel structures as well as performing standard etching tasks. When etching less than optimally chemical-mechanical polished (111) InSb wafers, sharp-tipped cone structures with tip radii of the order of less than 60 nm are produced. These structures may be ideally suited for the development of field-emission devices, where small tip radii are required for useful emission currents. The anisotropic nature of the IBAE technique allows one to etch channels in the surface at angles up to 70º from perpendicular, making the fabrication of microbeams feasible. Using an angled sample holder, the first etch undercuts the masked beams from one side. The sample is then removed and realigned so as to undercut the beams from the other side. The triangular shaped microbeams are left suspended from either one or both ends. Using a combination of atomic force microscopy and mechanical engineering beam analysis techniques, the elastic parameters of the material can be measured. The microbeams can be aligned along various directions on the surface to investigate anisotropic characteristics. This is particularly important for determining the mechanical characteristics of materials that can only be grown in thin epitaxial layers, such as quaternary antimonide-based compound semiconductors. I.

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Preparation and Patterning of GaSb Surfaces with Br-IBAE for Antimonide Based Molecular Beam Epitaxy

Cited by 3 publications

References 8 publications

Roughness Analysis of Episurfaces Grown on Ion-Beam Processed GaSb Substrates

Roughness Analysis of Episurfaces Grown on Ion-Beam Processed GaSb Substrates

Molecular beam epitaxy on gas cluster ion beam-prepared GaSb substrates: Towards improved surfaces and interfaces

Fabrication of Nanotips and Microbeams in Antimonide Based Semiconductor Material using Bromine Ion Beam Assisted Etching

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