To analyze the dynamic of ion species through a MAPbI3–x
Cl
x
(HaP)
solar cell,
an operando hard X-ray photoelectron spectroscopy (HAXPES) study was
proposed. Stacked Au/Ag/AZO/PCBM/HaP/NiO/ITO/glass structures, where
AZO, PCBM, NiO, and ITO stand for Al-doped zinc oxide, phenyl-C61-butyric
acid methyl ester, nickel oxide, and indium tin oxide, respectively,
were evaluated. Experimental core level analysis under an applied
bias voltage highlighted that a certain threshold voltage (above the
open-circuit voltage (V
OC)) is required
to trigger the iodide (I–) migration from the HaP
to the adjacent electron and hole transport layers. Study also demonstrated
that the diffusion of I– in AZO/PCBM over time is
unidirectional and follows the gradient descent in concentration.
We observed that the irreversibility of the I– transport
leads to the absorption of I– by the Ag layer to
form a silver iodide (AgI) compound. Furthermore, this work also pointed
out the efficiency of an ITO layer when deposited between Ag and AZO
to serve as the ion diffusion barrier layer. Finally, the results
demonstrated that the presence of ITO restrains the AgI formation
and contributes to improving cell performances.