Preparation and properties of different dielectric films with Al metal electrode

Dong, Qi; Zhong, Shao‐Long; Feng, Qingxiang; Zheng, Ming‐Sheng; Ping, Jiang‐Bo; Dang, Zhi‐Min

doi:10.1049/nde2.12037

Cited by 3 publications

(2 citation statements)

References 30 publications

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“…In the process of preparing organic dielectric thin films, adding modified inorganic fillers to improve the overall performance of materials is the most direct method. The fillers used include zero dimensional granules, one-dimensional fibers (or tubes), and two-dimensional (2-D) flakes [12][13][14][15][16]. For instance, Li et al incorporated ultra-thin boron nitride nanosheets in the ferroelectric terpolymers via solution method and the breakdown field of the polymer nanocomposites get a great enhancement.…”

Section: Introductionmentioning

confidence: 99%

A Bilayer High-Temperature Dielectric Film with Superior Breakdown Strength and Energy Storage Density

et al. 2023

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The further electrification of various fields in production and daily life makes it a topic worthy of exploration to improve the performance of capacitors for a long time, including thin-film capacitors. The discharge energy density of thin-film capacitors that serves as one of the important types directly depends on electric field strength and the dielectric constant of the insulation material. However, it has long been a great challenge to improve the breakdown strength and dielectric constant simultaneously. Considering that boron nitride nanosheets (BNNS) possess superior insulation and thermal conductivity owing to wide band gap and 2-dimensional structure, a bilayer polymer film is prepared via coating BNNS by solution casting on surface of polyethylene terephthalate (PET) films. By revealing the bandgap and insulating behavior with UV absorption spectrum, leakage current, and finite element calculation, it is manifested that nanocoating contributes to enhance the bandgap of polymer films, thereby suppressing the charge injection by redirecting their transport from electrodes. Worthy to note that an ultrahigh breakdown field strength (~ 736 MV m−1), an excellent discharge energy density (~ 8.77 J cm−3) and a prominent charge–discharge efficiency (~ 96.51%) are achieved concurrently, which is ascribed to the contribution of BNNS ultrathin layer. In addition, the modified PET films also have superior comprehensive performance at high temperatures (~ 120 °C). The materials and methods here selected are easily accessible and facile, which are suitable for large-scale roll-to-roll process production, and are of certain significance to explore the methods about film modification suitable for commercial promotion.

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Section: Introductionmentioning

confidence: 99%

A Bilayer High-Temperature Dielectric Film with Superior Breakdown Strength and Energy Storage Density

et al. 2023

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“…With excellent heat resistance, high mechanical strength, and outstanding insulation properties, polyimide film has been widely applied in electrical, electronic and microelectronic fields. As the most representative application, high‐performance polyimide film has become the irreplaceable insulating substrate and dielectric material in the manufacture of flexible printed circuit boards [1–7]. Due to the large number of strong polar imide groups in the structure, polyimide films typically have dielectric constant ranging from 3.0 to 3.6 and high dielectric loss factors, especially at high frequencies [8].…”

Section: Introductionmentioning

confidence: 99%

Siloxane‐containing polyimide films with high heat resistance and low dielectric constant

Mo,

Zhai,

Liu

et al. 2023

IET Nanodielectrics

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A series of siloxane‐containing polyimide films (PIS) were prepared by copolymerising with rigid aromatic dianhydride, siloxane diamines and six different aromatic diamines. The effects of siloxane structures, fluorine and imide content, rigid or flexible segment on the heat resistance, moisture absorption, dielectric performance, mechanical and bonding properties were systematically studied. The results show that PIS films maintain good heat resistance with Tg between 292 and 420°C and 5% weight loss temperature higher than 500°C. The moisture absorption and dielectric constant can be significantly reduced due to the presence of siloxanes and fluorinated groups, with the absorption rate as low as 1.2% and dielectric constant of 2.85 at 1 MHz. When measured at 10 GHz, the dielectric constant ranges from 3.10 to 3.50, and dielectric loss varies from 0.0059 to 0.0098. The PIS‐6 film has the best comprehensive performance due to the low imide content, introduction of trifluoromethyl and ether bonds. The peeling strength of bonding PIS‐6 film with a copper foil can reach 9.2 N/cm. It is proven that siloxane‐containing PIS films with high heat resistance, low dielectric and outstanding adhesion are achieved, which can be applied for flexible integrated circuit boards, high‐frequency electronics and microelectronics fields.

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Electrostatic interaction bridges the charge transport kinetics and high-temperature capacitive energy storage performance of polymer dielectrics

Yang,

Zhao,

Yan

et al. 2024

Energy Environ. Sci.

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Preparation and properties of different dielectric films with Al metal electrode

Cited by 3 publications

References 30 publications

A Bilayer High-Temperature Dielectric Film with Superior Breakdown Strength and Energy Storage Density

A Bilayer High-Temperature Dielectric Film with Superior Breakdown Strength and Energy Storage Density

Siloxane‐containing polyimide films with high heat resistance and low dielectric constant

Electrostatic interaction bridges the charge transport kinetics and high-temperature capacitive energy storage performance of polymer dielectrics

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