The electrical and reliability characteristics of CuSc layer on SiO 2 film are reported. In an integrated CuSc/SiO 2 structure, a selfforming barrier (SFB) was formed at the interface by thermal annealing at 425 °C. After annealing, electrical characteristics, electromigration, and time-dependent-dielectric-breakdown reliability were improved due to the formation of SFB. This shows that CuSc has great potential as a liner-and barrier-free interconnect material.